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FGD3050G2 - N-Channel IGBT

Key Features

  • SCIS Energy = 300 mJ at TJ = 25°C.
  • Logic Level Gate Drive.
  • AEC.
  • Q101 Qualified and PPAP Capable.
  • This Device is Pb.
  • Free, Halid Free and is RoHS Compliant.

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Full PDF Text Transcription (Reference)

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DATA SHEET www.onsemi.com ECOSPARK) II, Ignition IGBT COLLECTOR 300 mJ, 500 V, N−Channel Ignition IGBT FGD3050G2 Features • SCIS Energy = 300 mJ at TJ = 25°C • Logic Level Gate Drive • AEC−Q101 Qualified and PPAP Capable • This Device is Pb−Free, Halid Free and is RoHS Compliant Applications • Automotive Ignition Coil Driver Circuits • Coil on Plug Application MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Parameter Value Unit BVCER Collector to Emitter Breakdown Voltage (IC = 1 mA) 500 V BVECS Emitter to Collector Voltage − Reverse Battery Condition (IC = 10 mA) 20 V ESCIS25 ISCIS = 14.2 A, L = 3.0 mHy, RGE = 1 kW 300 mJ TC = 25°C ESCIS150 ISCIS = 11.0 A, L = 3.