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  ON Semiconductor Electronic Components Datasheet  

FGD3050G2 Datasheet

N-Channel IGBT

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www.onsemi.com
FGD3050G2
EcoSPARKTM 2 300mJ, 500V, N-Channel Ignition IGBT
Features
SCIS Energy = 300mJ at TJ = 25°C
Logic Level Gate Drive
RoHS Compliant
Applications
Automotive Ignition Coil Driver Circuits
Coil On Plug Applications
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
BVCER
BVECS
ESCIS25
Collector to Emitter Breakdown Voltage (IC = 1mA)
Emitter to Collector Voltage - Reverse Battery Condition (IC = 10mA)
ISCIS = 14.2A, L = 3.0mHy, RGE = 1K
TC = 25°C
ESCIS150 ISCIS = 11.0A, L = 3.0mHy, RGE = 1K
TC = 150°C
IC25
IC110
VGEM
Collector Current Continuous, at TC = 25°C, VGE = 5.0V
Collector Current Continuous, at TC = 110°C, VGE = 5.0V
Gate to Emitter Voltage Continuous
PD
TJ
TSTG
Power Dissipation Total
Power Dissipation Derating
Operating Junction Temperature Range
Storage Junction Temperature Range
TC = 25°C
TC > 25°C
TL
TPKG
ESD
Max Lead Temp for soldering (Leads at 1.6mm from case for 10s)
Max Lead Temp for soldering (Package Body for 10s)
Electrostatic Discharge Voltage at 100pF, 1500
Ratings
500
20
300
180
32
27
±10
150
1.1
-40 to +175
-40 to +175
300
260
4
Units
V
V
mJ
mJ
A
A
V
W
W/oC
oC
oC
oC
oC
kV
Semiconductor Components Industries, LLC, 2017
May, 2017, Rev. 1.0
1
Publication Order Number:
FGD3050G2


  ON Semiconductor Electronic Components Datasheet  

FGD3050G2 Datasheet

N-Channel IGBT

No Preview Available !

Thermal Characteristics
RJC
Thermal Resistance Junction to Case
0.9 oC/W
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVCER
BVCES
BVECS
BVGES
ICER
IECS
R1
R2
VGE = 0V,ICE = 2mA,
Collector to Emitter Breakdown Voltage
RGE
TJ =
= 1K,
-40 to 150oC
VGE = 0V, ICE = 10mA,
Collector to Emitter Breakdown Voltage
RGE
TJ =
= 0,
-40 to
150oC
Emitter to Collector Breakdown Voltage
VGE = 0V, ICE = -75mA,
TJ = 25°C
Gate to Emitter Breakdown Voltage IGES = ±5mA
Collector to Emitter Leakage Current VCE = 250V, RGE = 1K
Emitter to Collector Leakage Current
Series Gate Resistance
Gate to Emitter Resistance
VEC = 15V
TJ = 25oC
TJ = 150oC
TJ = 25oC
TJ = 150oC
On Characteristics
VCE(SAT) Collector to Emitter Saturation Voltage
VCE(SAT) Collector to Emitter Saturation Voltage
VCE(SAT) Collector to Emitter Saturation Voltage
VGE = 4V, ICE = 6A
VGE = 4.5V, ICE = 10A
VGE = 4.5V, ICE = 15A
TJ = 25oC
TJ = 150oC
TJ = 150oC
Dynamic Characteristics
QG(ON) Gate Charge
VGE(TH) Gate to Emitter Threshold Voltage
VGEP Gate to Emitter Plateau Voltage
VGE = 5V, VCE = 12V, ICE = 10A
ICE = 1mA, VCE = VGE,
TJ = 25oC
TJ = 150oC
VCE = 12V, ICE = 10A
Switching Characteristics
td(ON)R
trR
td(OFF)L
tfL
Current Turn-On Delay Time-Resistive VCE = 14V, RL = 1
Current Rise Time-Resistive
VGE = 5V, RG = 1K
Current Turn-Off Delay Time-Inductive VCE = 300V, L = 2mH,
Current Fall Time-Inductive
VGE = 5V, RG = 1K
Ordering Information
470 - 530 V
495 - 555 V
20 - - V
±12 ±14 -
V
- - 25 A
- - 1 mA
-
-
-
-
1
40
mA
- 111 -
10K - 30K
- 1.1 1.2 V
- 1.3 1.45 V
- 1.6 1.75 V
- 22 - nC
1.3 1.6
0.75 1.1
2.2
1.8
V
- 2.7 -
V
- 0.9 4 s
- 1.6 7 s
- 5.4 15 s
- 1.4 15 s
Device Marking
Device
FGD3050G2 FGD3050G2_F085
Package
TO-252AA
Reel Size
330mm
Tape Width
16mm
Quantity
2500units
www.onsemi.com
2


Part Number FGD3050G2
Description N-Channel IGBT
Maker ON Semiconductor
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