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FGD3325G2-F085 Datasheet

N-Channel Ignition IGBT

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FGD3325G2-F085
EcoSPARK®2 330mJ, 250V, N-Channel Ignition IGBT
Features
„ SCIS Energy = 330mJ at TJ = 25oC
„ Logic Level Gate Drive
„ Qualified to AEC Q101
„ RoHS Compliant
Applications
„ Automotive lgnition Coil Driver Circuits
„ Coil On Plug Applications
Package
GATE
EMITTER
COLLECTOR
JEDEC TO-252
D-Pak
@2015 Semiconductor Components Industries, LLC.
August-2017, Rev. 2
Publication Order Number:
FGD3325G2-F085/D


  ON Semiconductor Electronic Components Datasheet  

FGD3325G2-F085 Datasheet

N-Channel Ignition IGBT

No Preview Available !

Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
BVCER Collector to Emitter Breakdown Voltage (IC = 1mA)
BVECS Emitter to Collector Voltage - Reverse Battery Condition (IC = 10mA)
ESCIS25 ISCIS = 14.8A, L = 3.0mHy, RGE = 1KΩ
TC = 25°C
ESCIS150 ISCIS = 11.4A, L = 3.0mHy, RGE = 1KΩ
TC = 150°C
IC25 Collector Current Continuous, at VGE = 5.0V, TC = 25°C
IC110
Collector Current Continuous, at VGE = 5.0V, TC = 110°C
VGEM Gate to Emitter Voltage Continuous
PD
Power Dissipation Total, at TC = 25°C
Power Dissipation Derating, for TC > 25oC
TC = 25°C
TC > 25°C
TJ Operating Junction Temperature Range
TSTG Storage Junction Temperature Range
TL Max. Lead Temp. for Soldering (Leads at 1.6mm from case for 10s)
TPKG Reflow soldering according to JESD020C
ESD
HBM-Electrostatic Discharge Voltage at100pF, 1500Ω
CDM-Electrostatic Discharge Voltage at 1Ω
Package Marking and Ordering Information
Ratings
250
28
330
195
41
25
±10
150
1.0
-55 to +175
-55 to +175
300
260
4
2
Units
V
V
mJ
mJ
A
A
V
W
W/oC
oC
oC
oC
oC
kV
kV
Device Marking
Device
FGD3325G2 FGD3325G2-F085
Package
TO252
Reel Size
330mm
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Tape Width
16mm
Quantity
2500 units
Min Typ Max Units
Off State Characteristics
BVCER
BVCES
BVECS
BVGES
ICER
IECS
R1
R2
ICE = 2mA, VGE = 0,
Collector to Emitter Breakdown Voltage
RGE
TJ =
= 1KΩ,
-40 to 150oC
ICE = 10mA, VGE = 0V,
Collector to Emitter Breakdown Voltage
RGE
TJ =
= 0,
-40 to
150oC
Emitter to Collector Breakdown Voltage
ICE = -75mA, VGE = 0V,
TJ = 25°C
Gate to Emitter Breakdown Voltage IGES = ±2mA
Collector to Emitter Leakage Current VCE = 175V, RGE = 1K
Emitter to Collector Leakage Current VEC = 24V,
Series Gate Resistance
Gate to Emitter Resistance
TJ = 25oC
TJ = 150oC
TJ = 25oC
TJ = 150oC
On State Characteristics
VCE(SAT) Collector to Emitter Saturation Voltage
VCE(SAT) Collector to Emitter Saturation Voltage
VCE(SAT) Collector to Emitter Saturation Voltage
ICE = 6A, VGE = 4V,
ICE = 10A, VGE = 4.5V,
ICE = 15A, VGE = 4.5V,
TJ = 25oC
TJ = 150oC
TJ = 150oC
225 - 275 V
240 - 290 V
28 - - V
±12 ±14 -
V
- - 25 μA
- - 1 mA
-
-
-
-
1
40
mA
- 120 -
Ω
10K - 30K Ω
- 1.15 1.25 V
- 1.35 1.50 V
- 1.68 1.85 V
www.onsemi.com
2


Part Number FGD3325G2-F085
Description N-Channel Ignition IGBT
Maker ON Semiconductor
Total Page 10 Pages
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