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  ON Semiconductor Electronic Components Datasheet  

FGH20N60UFD Datasheet

IGBT

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IGBT - Field Stop
600 V, 20 A
FGH20N60UFD
Description
Using novel field stop IGBT Technology, ON Semiconductor’s field
stop IGBTs offer the optimum performance for solar inverter, UPS,
welder and PFC applications where low conduction and switching
losses are essential.
Features
High Current Capability
Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 20 A
High Input Impedance
Fast Switching
This Device is PbFree and is RoHS Compliant
Applications
Solar Inverter, UPS, Welder, PFC
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
VCES
VGES
Collector Current
@ TC = 25°C
@ TC = 100°C
IC
Pulsed Collector Current
@ TC = 25°C
(NIoCteM 1)
Diode Forward Current
@ TC = 25°C
@ TC = 100°C
IF
Pulsed Diode Maximum Forward
Current
(NoIFtMe 1)
Value
600
±20
±30
40
20
60
20
10
60
Unit
V
V
A
A
A
A
Maximum Power Dissipation
@ TC = 25°C
@ TC = 100°C
PD W
165
66
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temperature
for Soldering, 1/8from Case
for 5 Seconds
TJ 55 to + 150 °C
Tstg 55 to + 150 °C
TL 300 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Repetitive rating: Pulse width limited by max. junction temperature.
www.onsemi.com
C
G
E
EC
G
TO2473LD
CASE 340CK
MARKING DIAGRAM
$Y&Z&3&K
FGH20N60
UFD
$Y
&Z
&3
&K
FGH20N60UFD
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2008
February, 2020 Rev. 2
1
Publication Order Number:
FGH20N60UFD/D


  ON Semiconductor Electronic Components Datasheet  

FGH20N60UFD Datasheet

IGBT

No Preview Available !

FGH20N60UFD
THERMAL CHARACTERISTICS
Parameter
Thermal Resistance JunctiontoCase, for IGBT
Thermal Resistance JunctiontoCase, for Diode
Thermal Resistance JunctiontoAmbient
Symbol
RqJC
RqJC
RqJA
Typ.
Max.
0.76
2.51
40
Unit
°C/W
°C/W
°C/W
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Mark
Package
FGH20N60UFDTU
FGH20N60UFD
TO247
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30 Units
ELECTRICAL CHARACTERISTICS OF THE IGBT (TC = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
OFF CHARACTERISTICS
Collector to Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
BVCES
DBVCES/DTJ
VGE = 0 V, IC = 250 mA
VGE = 0 V, IC = 250 mA
Collector CutOff Current
GE Leakage Current
ON CHARACTERISTICs
GE Threshold Voltage
Collector to Emitter Saturation Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
TurnOn Switching Loss
TurnOff Switching Loss
Total Switching Loss
TurnOn Delay Time
Rise Time
TurnOff Delay Time
Fall Time
TurnOn Switching Loss
TurnOff Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
ICES
IGES
VGE(th)
VCE(sat)
Cies
Coes
Cres
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
VCE = VCES, VGE = 0 V
VGE = VGES, VCE = 0 V
IC = 250 mA, VCE = VGE
IC = 20 A, VGE = 15 V
IC = 20 A, VGE = 15 V, TC = 125°C
VCE = 30 V, VGE = 0 V, f = 1 MHz
VCC = 400 V, IC = 20 A,
RG = 10 W, VGE = 15 V,
Inductive Load, TC = 25°C
VCC = 400 V, IC = 20 A,
RG = 10 W, VGE = 15 V,
Inductive Load, TC = 125°C
VCE = 400 V, IC = 20 A, VGE = 15 V
Min
600
4.0
Typ Max Unit
− −V
0.6 V/°C
250 mA
±400 nA
5.0 6.5 V
1.8 2.4 V
2.0 V
940 pF
110 pF
40 pF
13 ns
17 ns
87 ns
32 64 ns
0.38 mJ
0.26 mJ
0.64 mJ
13 ns
16 ns
92 ns
63 ns
0.41 mJ
0.36 mJ
0.77 mJ
63 nC
7 nC
32 nC
www.onsemi.com
2


Part Number FGH20N60UFD
Description IGBT
Maker ON Semiconductor
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