IGBT - Field Stop
600 V, 20 A
FGH20N60UFD
Description
Using novel field stop IGBT Technology, ON Semiconductor’s field
stop IGBTs offer the optimum performance for solar inverter, UPS,
welder and PFC applications where low conduction and switching
losses are essential.
Features
• High Current Capability
• Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 20 A
• High Input Impedance
• Fast Switching
• This Device is Pb−Free and is RoHS Compliant
Applications
• Solar Inverter, UPS, Welder, PFC
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Collector to Emitter Voltage
Gate to Emitter Voltage
Transient Gate to Emitter Voltage
VCES
VGES
Collector Current
@ TC = 25°C
@ TC = 100°C
IC
Pulsed Collector Current
@ TC = 25°C
(NIoCteM 1)
Diode Forward Current
@ TC = 25°C
@ TC = 100°C
IF
Pulsed Diode Maximum Forward
Current
(NoIFtMe 1)
Value
600
±20
±30
40
20
60
20
10
60
Unit
V
V
A
A
A
A
Maximum Power Dissipation
@ TC = 25°C
@ TC = 100°C
PD W
165
66
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temperature
for Soldering, 1/8″ from Case
for 5 Seconds
TJ −55 to + 150 °C
Tstg −55 to + 150 °C
TL 300 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Repetitive rating: Pulse width limited by max. junction temperature.
www.onsemi.com
C
G
E
EC
G
TO−247−3LD
CASE 340CK
MARKING DIAGRAM
$Y&Z&3&K
FGH20N60
UFD
$Y
&Z
&3
&K
FGH20N60UFD
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2008
February, 2020 − Rev. 2
1
Publication Order Number:
FGH20N60UFD/D
