FGH25N120FTDS Description
Using advanced field stop trench technology, ON Semiconductor’s 1200 V trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications.
FGH25N120FTDS Key Features
- High Speed Switching
- Low Saturation Voltage: VCE(sat) =1.60 V @ IC = 25 A
- High Input Impedance
- These Device is Pb-Free and is RoHS pliant