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FGH30S130P Datasheet

Manufacturer: onsemi
FGH30S130P datasheet preview

FGH30S130P Details

Part number FGH30S130P
Datasheet FGH30S130P Datasheet PDF (Download)
File Size 376.90 KB
Manufacturer onsemi
Description IGBT
FGH30S130P page 2 FGH30S130P page 3

FGH30S130P Overview

Using advanced field stop trench and shorted−anode technology, ON Semiconductor’s shorted−anode trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche capability. This device is designed for induction heating and microwave oven.

FGH30S130P Key Features

  • High Speed Switching
  • Low Saturation Voltage: VCE(sat) =1.75 V @ IC = 30 A
  • High Input Impedance
  • This Device is Pb-Free and is RoHS pliant

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