FGH40N60SF igbt equivalent, igbt.
* High Current Capability
* Low Saturation Voltage: VCE(sat) = 2.3 V @ IC = 40 A
* High Input Impedance
* Fast Switching: EOFF = 8 mJ/A
* This Device .
where low conduction and switching losses are essential.
Features
* High Current Capability
* Low Saturation Vol.
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