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FGH50T65SQD IGBT

FGH50T65SQD Description

IGBT - Field Stop, Trench 650 V, 50 A FGH50T65SQD .
Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inver.

FGH50T65SQD Features

* Max Junction Temperature TJ = 175°C
* Positive Temperature Co
* efficient for Easy Parallel Operating
* High Current Capability
* Low Saturation Voltage: VCE(sat) = 1.6 V (Typ. ) @ IC = 50 A
* 100% of the Parts Tested for ILM
* High Input Impeda

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IGBT ON Semiconductor
ON Semiconductor FGH50T65SQD-like datasheet