FGH50T65SQD Datasheet - ON Semiconductor

IGBT

* Max Junction Temperature TJ = 175°C

* Positive Temperature Co

* efficient for Easy Parallel Operating

* High Current Capability

* Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 50 A

* 100% of the Parts Tested for ILM

* High Input Impeda

FGH50T65SQD

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Igbt.

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FGH50T65SQD IGBT ON Semiconductor

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