FGH50T65SQD Datasheet IGBT

Manufacturer: onsemi

Overview: IGBT - Field Stop, Trench 650 V, 50 A FGH50T65SQD.

FGH50T65SQD igbt by onsemi - Datasheet Preview

Datasheet Details

Part number	FGH50T65SQD
Manufacturer	onsemi
File Size	543.39 KB
Description	IGBT
Download	FGH50T65SQD Download (PDF)

General Description

Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.

Key Features

Max Junction Temperature TJ = 175°C.
Positive Temperature Co.
efficient for Easy Parallel Operating.
High Current Capability.
Low Saturation Voltage: VCE(sat) = 1.6 V (Typ. ) @ IC = 50 A.
100% of the Parts Tested for ILM.
High Input Impedance.
Fast Switching.
Tighten Parameter Distribution.
This Device is Pb.
Free and is RoHS Compliant.

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