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FGH50T65SQD - IGBT

Datasheet Summary

Description

series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.

Features

  • Max Junction Temperature TJ = 175°C.
  • Positive Temperature Co.
  • efficient for Easy Parallel Operating.
  • High Current Capability.
  • Low Saturation Voltage: VCE(sat) = 1.6 V (Typ. ) @ IC = 50 A.
  • 100% of the Parts Tested for ILM.
  • High Input Impedance.
  • Fast Switching.
  • Tighten Parameter Distribution.
  • This Device is Pb.
  • Free and is RoHS Compliant.

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Full PDF Text Transcription

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IGBT - Field Stop, Trench 650 V, 50 A FGH50T65SQD Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features • Max Junction Temperature TJ = 175°C • Positive Temperature Co−efficient for Easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.6 V (Typ.) @ IC = 50 A • 100% of the Parts Tested for ILM • High Input Impedance • Fast Switching • Tighten Parameter Distribution • This Device is Pb−Free and is RoHS Compliant Applications • Solar Inverter, UPS, Welder, Telecom, ESS, PFC www.onsemi.
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