FGH60N60SMD-F085 - IGBT

Product Overview

ON Semiconductor

Datasheet Details

Part number	FGH60N60SMD-F085
Manufacturer	ON Semiconductor
File Size	374.58 KB
Description	IGBT
Datasheet	FGH60N60SMD-F085 Datasheet
Additional preview pages of the FGH60N60SMD-F085 datasheet.

Product details

Description

Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of Field Stop Trench IGBTs offer the optimum performance for Automotive chargers, Solar Inverter, UPS and Digital Power Generator where low conduction and switching losses are essential.

Features

Maximum Junction Temperature: TJ = 175°C.
Positive Temperature Co.
efficient for easy Parallel Operating.
High Current Capability.
Low Saturation Voltage: VCE(sat) = 1.8 V (Typ. ) @ IC = 60 A.
High Input Impedance.
Tightened Parameter Distribution.
This Device is Pb.
Free and is RoHS Compliant.
Qualified to Automotive Requirements of AEC.
Q101.

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Published: Oct 2, 2022 |