FGH60N60SMD-F085 Overview
Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of Field Stop Trench IGBTs offer the optimum performance for Automotive chargers, Solar Inverter, UPS and Digital Power Generator where low conduction and switching losses are essential.
FGH60N60SMD-F085 Key Features
- Maximum Junction Temperature: TJ = 175°C
- Positive Temperature Co-efficient for easy Parallel Operating
- High Current Capability
- Low Saturation Voltage: VCE(sat) = 1.8 V (Typ.) @ IC = 60 A
- High Input Impedance
- Tightened Parameter Distribution
- This Device is Pb-Free and is RoHS pliant
- Qualified to Automotive Requirements of AEC-Q101