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FGH60N60SMD-F085 - IGBT

General Description

new series of Field Stop Trench IGBTs offer the optimum performance for Automotive chargers, Solar Inverter, UPS and Digital Power Generator where low conduction and switching losses are essential.

Key Features

  • Maximum Junction Temperature: TJ = 175°C.
  • Positive Temperature Co.
  • efficient for easy Parallel Operating.
  • High Current Capability.
  • Low Saturation Voltage: VCE(sat) = 1.8 V (Typ. ) @ IC = 60 A.
  • High Input Impedance.
  • Tightened Parameter Distribution.
  • This Device is Pb.
  • Free and is RoHS Compliant.
  • Qualified to Automotive Requirements of AEC.
  • Q101.

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IGBT - Field Stop 600 V, 60 A FGH60N60SMD-F085 Description Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of Field Stop Trench IGBTs offer the optimum performance for Automotive chargers, Solar Inverter, UPS and Digital Power Generator where low conduction and switching losses are essential. Features • Maximum Junction Temperature: TJ = 175°C • Positive Temperature Co−efficient for easy Parallel Operating • High Current Capability • Low Saturation Voltage: VCE(sat) = 1.8 V (Typ.) @ IC = 60 A • High Input Impedance • Tightened Parameter Distribution • This Device is Pb−Free and is RoHS Compliant • Qualified to Automotive Requirements of AEC−Q101 Applications • Automotive Chargers, Converters, High Voltage Auxiliaries • Solar Inverters, UPS, SMPS, PFC www.onsemi.