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FGH75T65UPD Datasheet IGBT

Manufacturer: onsemi

Overview: IGBT - Field Stop, Trench 650 V, 75 A FGH75T65UPD, FGH75T65UPD-F155.

General Description

Using innovative field stop trench IGBT technology, ON Semiconductor’s new series of field−stop trench IGBTs offer optimum performance for solar inverter, UPS, welder, and digital power genera−tor where low conduction and switching losses are essential.

Key Features

  • Maximum Junction Temperature: TJ = 175°C.
  • Positive Temperature Co.
  • efficient for Easy Parallel Operating.
  • High Current Capability.
  • Low Saturation Voltage: VCE(sat) = 1.65 V(Typ. ) @ IC = 75 A.
  • 100% of Parts Tested ILM.
  • High Input Impedance.
  • Tightened Parameter Distribution.
  • Short Circuit Ruggedness > 5 ms @ 25°C.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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