FGH80N60FD igbt equivalent, igbt.
* High Current Capability
* Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A
* High Input Impedance
* Fast Switching
* This Device is Pb−Free and .
where low conduction and switching losses are essential.
Features
* High Current Capability
* Low Saturation Vol.
Using Novel Field Stop IGBT Technology, ON Semiconductor’s
field stop IGBTs offer the optimum performance for induction heating, telecom, ESS and PFC applications where low conduction and switching losses are essential.
Features
* High Current Ca.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 386.92KB)