FGY100T65SCDT
Overview
Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 3rd generation IGBTs offer the optimum performance for solar, UPS, motor control, ESS and HVAC applications where low conduction and switching losses are essential.
- Maximum Junction Temperature: TJ = 175°C
- Positive Temperature Co-efficient for Easy Parallel Operating
- High Current Capability
- Low Saturation Voltage: VCE(sat) = 1.5 V (Typ.) @ IC = 100 A
- High Input Impedance
- Fast Switching
- Short Cirruit Rated 5 ms
- Tighten Parameter Distribution
- These Devices are Pb-Free and are RoHS Compliant
