FGY100T65SCDT Datasheet - ON Semiconductor

IGBT

* Maximum Junction Temperature: TJ = 175°C

* Positive Temperature Co-efficient for Easy Parallel Operating

* High Current Capability

* Low Saturation Voltage: VCE(sat) = 1.5 V (Typ.) @ IC = 100 A

* High Input Impedance

* Fast Switching

* Short

FGY100T65SCDT

421.92 KB

Igbt.

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FGY100T65SCDT IGBT ON Semiconductor

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