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FOD8802B - High-Temperature Phototransistor Optocoupler

Download the FOD8802B datasheet PDF. This datasheet also covers the FOD8802 variant, as both devices belong to the same high-temperature phototransistor optocoupler family and are provided as variant models within a single manufacturer datasheet.

General Description

The FOD8802 dual channel optocoupler is a best in class phototransistor, optocoupler utilizing onsemi’s leading

edge proprietary process technology to achieve high operating temperature performance, up to 125°C.

Key Features

  • Excellent CTR Linearity at High Temperature.
  • CTR at Very Low Input Current, IF.
  • High Isolation Voltage Regulated by Safety Agency, UL1577, 2500 VACRMS for 1 min.
  • Applicable to Infrared Ray Reflow, 260°C.
  • These are Pb.
  • Free Devices Typical.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FOD8802-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number FOD8802B
Manufacturer onsemi
File Size 361.29 KB
Description High-Temperature Phototransistor Optocoupler
Datasheet download datasheet FOD8802B Datasheet

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Other Datasheets by onsemi

Part Number Description
FOD8802 High-Temperature Phototransistor Optocoupler
FOD8802A High-Temperature Phototransistor Optocoupler
FOD8802C High-Temperature Phototransistor Optocoupler
FOD8802D High-Temperature Phototransistor Optocoupler
FOD8001 3.3V / 5V Logic Gate Optocoupler

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Dual Channel OptoHiTt Series, High-Temperature Phototransistor Optocoupler in Small Outline 8-Pin Package FOD8802 Series Description The FOD8802 dual channel optocoupler is a best−in−class phototransistor, optocoupler utilizing onsemi’s leading−edge proprietary process technology to achieve high operating temperature performance, up to 125°C. It consists of two aluminum gallium arsenide (AlGaAs) infrared light emitting diode optically coupled to two phototransistors, in a small outline, 8−pin SOIC package. It delivers consistent current transfer ratio at very low input current over temperature.