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FQA11N90C-F109 - N-Channel MOSFET

General Description

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.

Key Features

  • 11 A, 900 V, RDS(on) = 1.1 Ω (Max. ) @ VGS = 10 V, ID = 5.5 A.
  • Low Gate Charge (Typ. 60 nC).
  • Low Crss (Typ. 23 pF).
  • 100% Avalanche Tested.
  • RoHS compliant.

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Full PDF Text Transcription for FQA11N90C-F109 (Reference)

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FQA11N90C-F109 — N-Channel QFET® MOSFET FQA11N90C-F109 N-Channel QFET® MOSFET 900 V, 11.0 A, 1.1 Ω Features • 11 A, 900 V, RDS(on) = 1.1 Ω (Max.) @ VGS = 10 V, ID = 5.5 A • Low Gate Charge (Typ. 60 nC) • Low Crss (Typ. 23 pF) • 100% Avalanche Tested • RoHS compliant Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and elec-tronic lamp ballasts. D G G D S TO-3PN MOSFET Maximum Ratings TC = 25oC unless otherwise noted.