Datasheet Summary
- N-Channel QFET® MOSFET
N-Channel QFET® MOSFET
900 V, 5.4 A, 2.3 Ω
Features
- 5.4 A, 900 V, RDS(on) = 2.3 Ω (Max.) @ VGS = 10 V,
Description
ID = 2.7 A
This N-Channel enhancement mode power MOSFET is
- Low Gate Charge (Typ. 31 nC) produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET
- Low Crss (Typ. 13 pF) technology has been especially tailored to reduce on-state
- 100% Avalanche Tested resistance, and to provide superior switching performance and high avalanche energy strength. These devices are
- RoHS pliant suitable for switched mode power supplies, active power factor correction (PFC), and electronic...
