FQD3P50 mosfet equivalent, p-channel mosfet.
* −2.1 A, −500 V, RDS(on) = 4.9 W (Max.) @ VGS = −10 V,
ID = −1.05 A
* Low Gate Charge (Typ. 18 nC)
* Low Crss (Typ. 9.5 pF)
* 100% Avalanche Tested
*.
This P−Channel enhancement mode power MOSFET is produced
using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switc.
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