FQD4N25 Datasheet - ON Semiconductor

N-Channel MOSFET

FQD4N25 Features

* 3 A, 250 V, RDS(on) = 1.75 Ω (Max.) @ VGS = 10 V, ID = 1.5 A

* Low Gate Charge (Typ. 4.3 nC)

* Low Crss (Typ. 4.8 pF)

* 100% Avalanche Tested G S D D-PAK D G Absolute Maximum Ratings TC = 25°C unless otherwise noted. + 7 7 + < 7 < !$ :

FQD4N25 General Description

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strengt.

FQD4N25 Datasheet (919.21 KB)