FQD8P10TM-F085
Description
These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Key Features
- -6.6A, -100V, RDS(on) = 0.53Ω @VGS = -10 V
- Low gate charge ( typical 12 nC)
- Low Crss ( typical 30 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Qualified to AEC Q101
- RoHS Compliant
- D-PAK GS
