FQD8P10TM-F085 datasheet, mosfet equivalent, ON Semiconductor

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FQD8P10TM-F085 Features and benefits

* -6.6A, -100V, RDS(on) = 0.53Ω @VGS = -10 V
* Low gate charge ( typical 12 nC)
* Low Crss ( typical 30 pF)
* Fast switching
* 100% avalanche tested <.

FQD8P10TM-F085 Application

such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. D Features
* -6.6A, -100.

FQD8P10TM-F085 Description

These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior.

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