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FQD9N25 Datasheet N-Channel MOSFET

Manufacturer: onsemi

Overview: FQD9N25 / FQU9N25 — N-Channel QFET® MOSFET FQD9N25 / FQU9N25 N-Channel QFET® MOSFET 250 V, .

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General Description

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.

These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Key Features

  • 7.4 A, 250 V, RDS(on) = 420 mΩ (Max. ) @VGS = 10 V, ID = 3.7 A.
  • Low Gate Charge (Typ. 15.5 nC).
  • Low Crss (Typ. 15 pF).
  • 100% Avalanche Tested D G S D-PAK GDS I-PAK Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol , 5 5 , < 5 < !$ 7     Parameter    ,         2. ).
  • 63   2. 0++63     7     :  ,     7 (! .

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📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Fairchild Semiconductor Logo FQD9N25 250V N-Channel MOSFET Fairchild Semiconductor

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