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FQP9N90C - N-Channel MOSFET

General Description

This N

using onsemi’s proprietary planar stripe and DMOS technology.

state resistance, and to provide superior switching performance and high avalanche energy s

Key Features

  • 8 A 900 V, RDS(on) = 1.4 W (Max. ) @ VGS = 10 V, ID = 4 A.
  • Low Gate Charge (Typ. 45 nC).
  • Low Crss (Typ. 14 pF).
  • 100% Avalanche Tested.
  • This Device is Pb.
  • Free Halide, Free and RoHS Compliant. DATA SHEET www. onsemi. com GDS TO.
  • 220 CASE 221A GDS TO.
  • 220 Fullpack, 3.
  • Lead / TO.
  • 220F.
  • 3SG CASE 221AT D G S.

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Datasheet Details

Part number FQP9N90C
Manufacturer onsemi
File Size 390.80 KB
Description N-Channel MOSFET
Datasheet download datasheet FQP9N90C Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFET – N-Channel, QFET) 900 V, 8.0 A, 1.4 W FQP9N90C, FQPF9N90CT Description This N−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 8 A 900 V, RDS(on) = 1.4 W (Max.) @ VGS = 10 V, ID = 4 A • Low Gate Charge (Typ. 45 nC) • Low Crss (Typ. 14 pF) • 100% Avalanche Tested • This Device is Pb−Free Halide, Free and RoHS Compliant. DATA SHEET www.onsemi.