FQP9N90C Description
This N−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp...
FQP9N90C Key Features
- 8 A 900 V, RDS(on) = 1.4 W (Max.) @ VGS = 10 V, ID = 4 A
- Low Gate Charge (Typ. 45 nC)
- Low Crss (Typ. 14 pF)
- 100% Avalanche Tested
- This Device is Pb-Free Halide, Free and RoHS pliant
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalan
- Derate above 25°C
- 55 to +175