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FQPF27P06 Datasheet - ON Semiconductor

FQPF27P06 P-Channel MOSFET

This P *Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on *state resistance, and to provide superior switching performance and high avalanch.

FQPF27P06 Features

* 17 A,

* 60 V, RDS(on) = 70 mW (Max.) @ VGS =

* 10 V, ID =

* 8.5 A

* Low Gate Charge (Typ. 33 nC)

* Low Crss (Typ. 120 pF)

* 100% Avalanche Tested

* 175°C Maximum Junction Temperature Rating www.onsemi.com VDSS

* 60 V R

FQPF27P06-ONSemiconductor.pdf