FQPF8N90C datasheet, mosfet equivalent, ON Semiconductor

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Features and benefits

* 6.3 A, 900 V, RDS(on) = 1.9 Ω (Max.) @ VGS = 10 V, ID = 3.15 A
* Low Gate Charge (Typ. 35 nC)
* Low Crss (Typ. 12 pF)
* 100% Avalanche Tested D GDS T.

Description

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switc.

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