n-channel mosfet.
* 7.4 A, 250 V, RDS(on) = 420 mΩ (Max.) @VGS = 10 V, ID = 3.7 A
* Low Gate Charge (Typ. 15.5 nC)
* Low Crss (Typ. 15 pF)
* 100% Avalanche Tested
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This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switc.
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