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  ON Semiconductor Electronic Components Datasheet  

FW344A Datasheet

Power MOSFET

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Ordering number : EN8998C
FW344A
Power MOSFET
30V, 4.5A, 64mΩ, –30V, –3.5A, 102mΩ, Complementary Dual SOIC8
http://onsemi.com
Features
ON-resistance Nch : RDS(on)1=49mΩ(typ.)
Pch : RDS(on)1=78mΩ(typ.)
4V drive
Halogen free compliance
Nch+Pch MOSFET
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW10μs)
Drain Current (PW10μs)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
IDP
PD
PT
Tch
Duty cycle1%
Duty cycle1%
When mounted on ceramic substrate (2000mm2×0.8mm) 1unit
When mounted on ceramic substrate (2000mm2×0.8mm)
Storage Temperature
Tstg
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
N-channel P-channel
30 --30
±20 ±20
4.5 --3.5
5 --4
18 --14
1.4
1.7
150
--55 to +150
Unit
V
V
A
A
A
W
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7072-001
4.9
85
Product & Package Information
• Package
: SOIC8
• JEITA, JEDEC
: SC-87, SOT-96
• Minimum Packing Quantity : 2,500 pcs./reel
FW344A-TL-2W
0.22
Packing Type : TL
Marking
1
1.27
4
0.445 0.254 (GAGE PLANE)
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SOIC8
TL
Electrical Connection
8765
FW344
A LOT No.
Semiconductor Components Industries, LLC, 2013
July, 2013
1234
91212 TKIM/62712 TKIM/31412 TKIM/22212PA TKIM TC-00002693 No.8998-1/9


  ON Semiconductor Electronic Components Datasheet  

FW344A Datasheet

Power MOSFET

No Preview Available !

FW344A
Electrical Characteristics at Ta=25°C
Parameter
Symbol
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[P-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=4.5A
ID=4.5A, VGS=10V
ID=2A, VGS=4.5V
ID=2A, VGS=4V
VDS=10V, f=1MHz
See specied Test Circuit.
VDS=10V, VGS=10V, ID=4.5A
IS=4.5A, VGS=0V
ID=--1mA, VGS=0V
VDS=--30V, VGS=0V
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--3.5A
ID=--3.5A, VGS=--10V
ID=--2A, VGS=--4.5V
ID=--2A, VGS=--4V
VDS=--10V, f=1MHz
See specied Test Circuit.
VDS=--10V, VGS=--10V, ID=--3.5A
IS=--3.5A, VGS=0V
Ratings
min typ max
Unit
30
1.2
2.6
49
80
100
280
60
30
6
21
20
10
5.6
1.2
0.8
0.85
V
1 μA
±10 μA
2.6 V
S
64 mΩ
112 mΩ
140 mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.2 V
--30
--1.2
3.9
78
125
145
250
65
46
5.4
34
28
24
5
1
1.2
--0.88
--1
±10
--2.3
102
175
205
--1.5
V
μA
μA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
No.8998-2/9


Part Number FW344A
Description Power MOSFET
Maker ON Semiconductor
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FW344A Datasheet PDF






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