H11A1M Key Features
- Minimum Current Transfer Ratio, 50% at IF = 10 mA, VCE = 10 V
- Safety and Regulatory Approvals
- UL1577, 4,170 VACRMS for 1 Minute
- DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage
- Part: H11A1M
- Manufacturer: onsemi (official site)
- Size: 327.19 KB
Other H11A1M Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Motorola Semiconductor |
H11A1 | 6-Pin DIP Optoisolators |
QT Optoelectronics |
H11A1 | PHOTOTRANSISTOR OPTOCOUPLERS |
Fairchild |
H11A1 | GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS |
CT Micro |
H11A1 | Phototransistor Optocoupler |
| General Instrument Optoelectronics General Instrument Optoelectronics |
H11A1 | VDE Approved Transistor Output Optocoupler |
H11A1M Description
The general purpose optocoupler consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a standard plastic 6−pin dual−in−line package.