Datasheet Summary
6-Pin DIP High Voltage Phototransistor Optocouplers
4N38M, H11D1M, H11D3M, MOC8204M
Description The 4N38M, H11D1M, H11D3M and MOC8204M are phototransistor- type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six- pin dual- in- line package.
Features
- High Voltage:
- MOC8204M, BVCEO = 400 V
- H11D1M, BVCEO = 300 V
- H11D3M, BVCEO = 200 V
- Safety and Regulatory Approvals:
- UL1577, 4,170 VACRMS for 1 Minute
- DIN- EN/IEC60747- 5- 5, 850 V Peak Working Insulation Voltage
Applications
- Power Supply Regulators
- Digital Logic Inputs
- Microprocessor Inputs
-...
