HGTG12N60A4D
Key Features
- >100 kHz Operation 390 V, 12 A
- 600 V Switching SOA Capability
- Typical Fall Time 70 ns at TJ = 125°C
- Low Conduction Loss
- Temperature pensating Saber™ Model
- Related Literature
- These are Pb−Free Devices
- Part: HGTG12N60A4D
- Description: N-Channel IGBT
- Manufacturer: onsemi
- Size: 580.48 KB