HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
Parameter
Symbol
HGTG12N60A4D,
HGTP12N60A4D,
HGT1S12N60A4DS
Unit
Collector to Emitter Voltage
BVCES
600
V
Collector Current Continuous
At TC = 25°C
At TC = 110°C
IC25
IC110
54
23
A
A
Collector Current Pulsed (Note 1)
ICM 96 A
Gate to Emitter Voltage Continuous
VGES
±20
V
Gate to Emitter Voltage Pulsed
VGEM
±30
V
Switching Safe Operating Area at TJ = 150°C, Figure 2
SSOA
60 A at 600 V
Power Dissipation Total at TC = 25°C
PD 167 W
Power Dissipation Derating TC > 25°C
1.33 W/°C
Operating and Storage Junction Temperature Range
TJ, TSTG
−55 to 150
°C
Maximum Temperature for Soldering
Leads at 0.063 in (1.6 mm) from Case for 10 s
Package Body for 10 s, see Tech Brief 334.
TTpLkg
300
260
°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Pulse width limited by maximum junction temperature.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
BVCES
ICES
VCE(SAT)
VGE(TH)
IGES
SSOA
IC = 250 mA, VGE = 0 V
VCE = 600 V
TJ = 25°C
TJ = 125°C
IC = 12 A, VGE = 15 V
TJ = 25°C
TJ = 125°C
IC = 250 mA, VCE = 600 V
VGE = ±20 V
TJ = 150°C, RG = 10 W, VGE = 15 V,
L = 100 mH, VCE = 600 V
Gate to Emitter Plateau Voltage
On−State Gate Charge
Current Turn−On Delay Time
Current Rise Time
Current Turn−Off Delay Time
Current Fall Time
Turn−On Energy (Note 3)
Turn−On Energy (Note 3)
Turn−Off Energy (Note 2)
Current Turn−On Delay Time
Current Rise Time
Current Turn−Off Delay Time
Current Fall Time
Turn−On Energy (Note 3)
Turn−On Energy (Note 3)
Turn−Off Energy (Note 2)
VGEP
Qg(ON)
td(ON)I
trI
td(OFF)I
tfI
EON1
EON2
EOFF
td(ON)I
trI
td(OFF)I
tfI
EON1
EON2
EOFF
IC = 12 A, VCE = 300 V
IC = 12 A, VCE = 300 V VGE = 15 V
VGE = 20 V
IGBT and Diode at TJ = 25°C,
ICE = 12 A,
VCE = 390 V,
VGE = 15 V,
RG = 10 W,
L = 500 mH,
Test Circuit (Figure 24)
IGBT and Diode at TJ = 125°C,
ICE = 12 A,
VCE = 390 V,
VGE = 15 V,
RG = 10 W,
L = 500 mH,
Test Circuit (Figure 24)
Min
600
−
−
−
−
−
−
60
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ Max Unit
−−V
− 250 mA
− 2.0 mA
2.0 2.7
V
1.6 2.0
V
5.6 −
V
−
±250
nA
−−A
8−
78 96
97 120
17 −
8−
96 −
18 −
55 −
160 −
50 −
17 −
16 −
110 170
70 95
55 −
250 350
175 285
V
nC
nC
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
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