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  ON Semiconductor Electronic Components Datasheet  

HGTG12N60A4D Datasheet

N-Channel IGBT

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SMPS Series N-Channel
IGBT with Anti-Parallel
Hyperfast Diode
600 V
HGTG12N60A4D,
HGTP12N60A4D,
HGT1S12N60A4DS
The HGTG12N60A4D, HGTP12N60A4D and
HGT1S12N60A4DS are MOS gated high voltage switching devices
combining the best features of MOSFETs and bipolar transistors.
These devices have the high input impedance of a MOSFET and the
low onstate conduction loss of a bipolar transistor. The much lower
onstate voltage drop varies only moderately between 25°C and
150°C. The IGBT used is the development type TA49335. The diode
used in antiparallel is the development type TA49371.
This IGBT is ideal for many high voltage switching applications
operating at high frequencies where low conduction losses are
essential. This device has been optimized for high frequency switch
mode power supplies.
Formerly Developmental Type TA49337.
Features
>100 kHz Operation 390 V, 12 A
200 kHz Operation 390 V, 9A
600 V Switching SOA Capability
Typical Fall Time 70 ns at TJ = 125°C
Low Conduction Loss
Temperature Compensating SaberModel
Related Literature
TB334 “Guidelines for Soldering Surface Mount Components to
PC Boards”
These are PbFree Devices
www.onsemi.com
C
G
E
COLLECTOR
(FLANGE)
GCE
TO2203LD
CASE 340AT
JEDEC ALTERNATE
VERSION
GE
COLLECTOR
(FLANGE)
D2PAK3
(TO263, 3LEAD)
CASE 418AJ
JEDEC STYLE
ECG
COLLECTOR
(FLANGE)
TO2473LD
SHORT LEAD
CASE 340CK
JEDEC STYLE
MARKING DIAGRAM
$Y&Z&3&K
12N60A4D
$Y&Z&3&K
12N60A4D
$Y&Z&3&K
12N60A4D
© Semiconductor Components Industries, LLC, 2001
April, 2020 Rev. 3
$Y
&Z
&3
&K
12N60A4D
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 8 of
this data sheet.
1 Publication Order Number:
HGT1S12N60A4DS/D


  ON Semiconductor Electronic Components Datasheet  

HGTG12N60A4D Datasheet

N-Channel IGBT

No Preview Available !

HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
Parameter
Symbol
HGTG12N60A4D,
HGTP12N60A4D,
HGT1S12N60A4DS
Unit
Collector to Emitter Voltage
BVCES
600
V
Collector Current Continuous
At TC = 25°C
At TC = 110°C
IC25
IC110
54
23
A
A
Collector Current Pulsed (Note 1)
ICM 96 A
Gate to Emitter Voltage Continuous
VGES
±20
V
Gate to Emitter Voltage Pulsed
VGEM
±30
V
Switching Safe Operating Area at TJ = 150°C, Figure 2
SSOA
60 A at 600 V
Power Dissipation Total at TC = 25°C
PD 167 W
Power Dissipation Derating TC > 25°C
1.33 W/°C
Operating and Storage Junction Temperature Range
TJ, TSTG
55 to 150
°C
Maximum Temperature for Soldering
Leads at 0.063 in (1.6 mm) from Case for 10 s
Package Body for 10 s, see Tech Brief 334.
TTpLkg
300
260
°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Pulse width limited by maximum junction temperature.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
BVCES
ICES
VCE(SAT)
VGE(TH)
IGES
SSOA
IC = 250 mA, VGE = 0 V
VCE = 600 V
TJ = 25°C
TJ = 125°C
IC = 12 A, VGE = 15 V
TJ = 25°C
TJ = 125°C
IC = 250 mA, VCE = 600 V
VGE = ±20 V
TJ = 150°C, RG = 10 W, VGE = 15 V,
L = 100 mH, VCE = 600 V
Gate to Emitter Plateau Voltage
OnState Gate Charge
Current TurnOn Delay Time
Current Rise Time
Current TurnOff Delay Time
Current Fall Time
TurnOn Energy (Note 3)
TurnOn Energy (Note 3)
TurnOff Energy (Note 2)
Current TurnOn Delay Time
Current Rise Time
Current TurnOff Delay Time
Current Fall Time
TurnOn Energy (Note 3)
TurnOn Energy (Note 3)
TurnOff Energy (Note 2)
VGEP
Qg(ON)
td(ON)I
trI
td(OFF)I
tfI
EON1
EON2
EOFF
td(ON)I
trI
td(OFF)I
tfI
EON1
EON2
EOFF
IC = 12 A, VCE = 300 V
IC = 12 A, VCE = 300 V VGE = 15 V
VGE = 20 V
IGBT and Diode at TJ = 25°C,
ICE = 12 A,
VCE = 390 V,
VGE = 15 V,
RG = 10 W,
L = 500 mH,
Test Circuit (Figure 24)
IGBT and Diode at TJ = 125°C,
ICE = 12 A,
VCE = 390 V,
VGE = 15 V,
RG = 10 W,
L = 500 mH,
Test Circuit (Figure 24)
Min
600
60
Typ Max Unit
−−V
250 mA
2.0 mA
2.0 2.7
V
1.6 2.0
V
5.6
V
±250
nA
−−A
8
78 96
97 120
17
8
96
18
55
160
50
17
16
110 170
70 95
55
250 350
175 285
V
nC
nC
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
www.onsemi.com
2


Part Number HGTG12N60A4D
Description N-Channel IGBT
Maker ON Semiconductor
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HGTG12N60A4D Datasheet PDF






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