* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on
* state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, s
HGTG27N120BN Datasheet (385.34 KB)
HGTG27N120BN
385.34 KB
N-channel igbt.
NPT Series N-Channel IGBT 72 A, 1200 V HGTG27N120BN The HGTG27N120BN is Non Punch Through (NPT) IGBT design. This is a new member of the MOS g.
📁 Related Datasheet
HGTG27N120BN N-Channel IGBT (Fairchild Semiconductor)
HGTG27N120BN N-Channel IGBT (Intersil Corporation)
HGTG27N60C3DR N-Channel IGBT (Intersil)
HGTG27N60C3R N-Channel IGBT (Intersil)
HGTG20N100D2 N-Channel IGBT (Intersil Corporation)
HGTG20N120 N-Channel IGBT (Intersil Corporation)
HGTG20N120C3D N-Channel IGBT (Intersil Corporation)
HGTG20N120CN N-Channel IGBT (Intersil Corporation)
HGTG20N120CND N-Channel IGBT (Intersil Corporation)
HGTG20N120E2 N-Channel IGBT (Intersil Corporation)
