HGTG40N60B3 Overview
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Pulse width limited by maximum junction temperature. VCE(PK) = 360 V, TJ = 125°C, RG = 3.
HGTG40N60B3 Details
| Part number | HGTG40N60B3 |
|---|---|
| Datasheet | HGTG40N60B3-ONSemiconductor.pdf |
| File Size | 398.27 KB |
| Manufacturer | onsemi |
| Description | N-Channel IGBT |
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