HGTG40N60B3

The HGTG40N60B3 is N-Channel IGBT designed by ON Semiconductor.

Product Overview

ON Semiconductor

Datasheet Details

Part number	HGTG40N60B3
Manufacturer	ON Semiconductor
File Size	398.27 KB
Description	N-Channel IGBT
Datasheet	HGTG40N60B3-ONSemiconductor.pdf
Additional preview pages of the HGTG40N60B3 datasheet.

Product details

Description

Symbol Ratings Units Collector to Emitter Voltage BVCES 600 V Collector Current Continuous At TC = 25°C At TC = 110°C IC25 70 A IC110 40 Collector Current Pulsed (Note 1) Gate to Emitter Voltage Continuous ICM 330 A VGES ±20 V Gate to Emitter Voltage Pulsed VGEM ±30 V Switching Safe Operating Area at TJ = 150°C, Figure 3 SSOA 100 A at 600 V Power Dissipation Total at TC = 25°C Power Dissipation Derating TC > 25°C PD 290 W 2.33 W/°C Reverse Voltage Avalanche Ener

Features

of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on.
state conduction loss of a bipolar transistor. The much lower on.
state voltage drop varies only moderately between 25°C and 150°C. The IGBT is ideal for many high voltage switching.

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Published: Oct 3, 2022 |