of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The much lower on−st.

operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power su.

Symbol Ratings Units Collector to Emitter Voltage BVCES 600 V Collector Current Continuous At TC = 25°C At TC = 110°C IC25 70 A IC110 40 Collector Current Pulsed (Note 1) Gate to Emitter Voltage Continuous ICM 330 A VGES ±20 V Ga.

HGTG40N60A4

HGTG40N60C3

HGTG10N120BN

HGTG10N120BND

HGTG11N120CN

HGTG11N120CND

HGTG12N60A4

HGTG12N60A4D

HGTG12N60B3

HGTG12N60B3D

HGTG12N60C3D

HGTG12N60D1

HGTG12N60D1D