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HGTG7N60A4 - N-Channel IGBT

Download the HGTG7N60A4 datasheet PDF. This datasheet also covers the HGT1S7N60A4S9A variant, as both devices belong to the same n-channel igbt family and are provided as variant models within a single manufacturer datasheet.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HGT1S7N60A4S9A-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Overview

HGT1S7N60A4S9A, HGTG7N60A4 HGTP7N60A4 Data Sheet September 2004 600V, SMPS Series N-Channel IGBT The HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 are MOS gated high voltage switching devices combining the.

Key Features

  • of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching.