HGTG7N60A4D Datasheet - ON Semiconductor

N-Channel IGBT

HGTG7N60A4D Features

* of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on

* state conduction loss of a bipolar transistor. The much lower on

* state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49331.

HGTG7N60A4D General Description

Symbol All Types Units Collector to Emitter Voltage Collector Current Continuous At TC = 25°C At TC = 110°C BVCES 600 V IC25 34 A IC110 14 A Collector Current Pulsed (Note 1) Gate to Emitter Voltage Continuous Gate to Emitter Voltage Pulsed Switching Safe Operating Area at TJ = 150°C (.

HGTG7N60A4D Datasheet (537.51 KB)

HGTG7N60A4D Datasheet Preview — Preview of HGTG7N60A4D PDF

Datasheet Details

Part number:

HGTG7N60A4D

Manufacturer:

ON Semiconductor ↗

File Size:

537.51 KB

Description:

N-channel igbt.
SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V HGTG7N60A4D, HGTP7N60A4D, HGT1S7N60A4DS The HGTG7N60A4D, HGTP7N60A4D and HGT1S7N60.

📁 Related Datasheet

HGTG7N60A4 N-Channel IGBT (Fairchild Semiconductor)

HGTG7N60A4 N-Channel IGBT (Intersil Corporation)

HGTG7N60A4 N-Channel IGBT (ON Semiconductor)

HGTG7N60A4D N-Channel IGBT (Fairchild Semiconductor)

HGTG7N60A4D N-Channel IGBT (Intersil Corporation)

HGTG10N120BN 35A/ 1200V/ NPT Series N-Channel IGBT (Fairchild Semiconductor)

HGTG10N120BN N-Channel IGBT (Intersil Corporation)

HGTG10N120BND N-Channel IGBT (Fairchild Semiconductor)

HGTG10N120BND N-Channel IGBT (Intersil Corporation)

HGTG10N120BND N-Channel IGBT (ON Semiconductor)

TAGS

HGTG7N60A4D N-Channel IGBT ON Semiconductor

Image Gallery

HGTG7N60A4D Features

HGTG7N60A4D General Description

Datasheet Details

File Size:

Description:

HGTG7N60A4D Distributor