of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The much lower o.

operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequen.

Symbol All Types Units Collector to Emitter Voltage Collector Current Continuous At TC = 25°C At TC = 110°C BVCES 600 V IC25 34 A IC110 14 A Collector Current Pulsed (Note 1) Gate to Emitter Voltage Continuous Gate to Emitter Voltage Pu.

HGTG7N60A4

HGTG10N120BN

HGTG10N120BND

HGTG11N120CN

HGTG11N120CND

HGTG12N60A4

HGTG12N60A4D

HGTG12N60B3

HGTG12N60B3D

HGTG12N60C3D

HGTG12N60D1

HGTG12N60D1D

HGTG15N120C3