HGTP12N60A4D Datasheet | onsemi

features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on- state conduction loss of a bipolar transistor. The much lower on- state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49335. The diode used in anti- parallel is the development type TA49371. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49337. Features - >100 k Hz Operation 390 V, 12 A - 200 k Hz Operation 390 V, 9A - 600 V Switching SOA Capability - Typical Fall Time 70 ns at TJ = 125°C - Low Conduction Loss - Temperature pensating Saber™ Model - Related Literature - TB334 “Guidelines for Soldering Surface Mount ponents to PC Boards” - These are Pb- Free Devices .onsemi. C COLLECTOR (FLANGE) TO- 220- 3LD CASE 340AT JEDEC ALTERNATE VERSION COLLECTOR (FLANGE) D2PAK- 3 (TO- 263, 3- LEAD) CASE 418AJ JEDEC STYLE COLLECTOR (FLANGE) TO- 247- 3LD SHORT LEAD CASE 340CK JEDEC STYLE MARKING DIAGRAM $Y&Z&3&K 12N60A4D $Y&Z&3&K 12N60A4D $Y&Z&3&K 12N60A4D © Semiconductor ponents Industries, LLC, 2001 April, 2020 - Rev. 3 $Y &Z &3 &K 12N60A4D = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 8 of this data sheet. 1 Publication Order Number: HGT1S12N60A4DS/D HGTG12N60A4D, HGTP12N60A4D,...