HGTP7N60A4D datasheet, igbt equivalent, ON Semiconductor

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HGTP7N60A4D Features and benefits

of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The much lower o.

HGTP7N60A4D Application

operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequen.

HGTP7N60A4D Description

Symbol All Types Units Collector to Emitter Voltage Collector Current Continuous At TC = 25°C At TC = 110°C BVCES 600 V IC25 34 A IC110 14 A Collector Current Pulsed (Note 1) Gate to Emitter Voltage Continuous Gate to Emitter Voltage Pu.

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