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HUF75344G3 Datasheet N-channel Ultrafet Power MOSFET

Manufacturer: onsemi

Overview: Data Sheet N-Channel UltraFET Power MOSFET 55 V, 75 A, 8 mΩ These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and batteryoperated products. Formerly developmental type TA75344.

Key Features

  • 75A, 55V.
  • Simulation Models - Temperature Compensated PSPICE® and SABER™ Models - Thermal Impedance PSPICE and SABER Models Available on the web at: www. fairchildsemi. com.
  • Peak Current vs Pulse Width Curve.
  • UIS Rating Curve.
  • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S Packaging JEDEC STYLE TO-247 SOURCE DRAIN GATE JEDEC TO-220AB DRAIN (FLANGE) SOURCE DRAIN GATE DRAIN (TAB) All ON Se.

Similar Datasheet

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Fairchild Semiconductor Logo HUF75344G3 N-Channel MOSFET Fairchild Semiconductor
Intersil Corporation Logo HUF75344G3 N-Channel MOSFET Intersil Corporation

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HUF75344G3 Distributor