IRF830 Power Field Effect Transistor
IRF830 Power Field Effect Transistor N Channel Enhancement Mode Silicon Gate TMOS This TMOS Power FET is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. Silicon Gate for Fast Switching Speeds Low RDS(on) to Minimize On Losses, Specified at Elevated Temperature Rugged SOA is Power Dissipation Limited Source to Drain Diode Chara.