Datasheet Details
| Part number | IRFW630B |
|---|---|
| Manufacturer | onsemi |
| File Size | 807.53 KB |
| Description | N-Channel MOSFET |
| Download | IRFW630B Download (PDF) |
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Overview: IRFW630B — N-Channel MOSFET IRFW630B N-Channel MOSFET 200 V, 9 A, 400.
| Part number | IRFW630B |
|---|---|
| Manufacturer | onsemi |
| File Size | 807.53 KB |
| Description | N-Channel MOSFET |
| Download | IRFW630B Download (PDF) |
|
|
|
These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductors proprietary, planar, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.
• 9.0 A, 200 V, RDS(on) = 400 mΩ (Max.) @ VGS = 10 V, ID = 4.5 A • Low Gate Charge (Typ.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
IRFW630B | N-Channel MOSFET | Fairchild Semiconductor |
 |
IRFW630A | Power MOSFET | Samsung |
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