ISL9V3040D3STV Key Features
- SCIS Energy = 300 mJ at TJ = 25°C
- Logic Level Gate Drive
- This Device is Pb-Free and is RoHS pliant
- AEC-Q101 Qualified and PPAP Capable
- Part: ISL9V3040D3STV
- Description: N-Channel IGBT
- Manufacturer: onsemi
- Size: 636.77 KB
Other ISL9V3040D3STV Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Fairchild Semiconductor |
ISL9V3040D3S | N-Channel Ignition IGBT |
Unisonic Technologies |
ISL9V3040D3S | N-CHANNEL IGNITION IGBT |