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  ON Semiconductor Electronic Components Datasheet  

ISL9V5036S3S Datasheet

N-Channel IGBT

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ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3
EcoSPARK® 500mJ, 360V, N-Channel Ignition IGBT
General Description
The ISL9V5036S3S, ISL9V5036P3, and ISL9V5036S3 are the next
generation IGBTs that offer outstanding SCIS capability in the D²-
Pak (TO-263) and TO-220 plastic package. These devices are
intended for use in automotive ignition circuits, specifically as coil
drivers. Internal diodes provide voltage clamping without the need
for external components.
EcoSPARK® devices can be custom made to specific clamp
voltages. Contact your nearest ON Semiconductor sales
office for more information.
Formerly Developmental Type 49443
Applications
• Automotive Ignition Coil Driver Circuits
• Coil-On Plug Applications
Features
• Industry Standard D2-Pak package
• SCIS Energy = 500mJ at TJ = 25oC
• Logic Level Gate Drive
• Qualified to AEC Q101
• RoHS Compliant
Package
JEDEC TO-263AB
D²-Pak
G
E
Symbol
JEDEC TO-220AB
JEDEC TO-262AA
ECG
ECG
GATE
COLLECTOR
(FLANGE)
COLLECTOR
(FLANGE)
Device Maximum Ratings TA = 25°C unless otherwise noted
Symbol
BVCER
BVECS
ESCIS25
ESCIS150
IC25
IC110
VGEM
PD
TJ
TSTG
TL
Tpkg
ESD
Parameter
Collector to Emitter Breakdown Voltage (IC = 1 mA)
Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA)
At Starting TJ = 25°C, ISCIS = 38.5A, L = 670 µHy
At Starting TJ = 150°C, ISCIS = 30A, L = 670 µHy
Collector Current Continuous, At TC = 25°C, See Fig 9
Collector Current Continuous, At TC = 110°C, See Fig 9
Gate to Emitter Voltage Continuous
Power Dissipation Total TC = 25°C
Power Dissipation Derating TC > 25°C
Operating Junction Temperature Range
Storage Junction Temperature Range
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)
Max Lead Temp for Soldering (Package Body for 10s)
Electrostatic Discharge Voltage at 100pF, 1500
©2009 Semiconductor Components Industries, LLC.
October-2017, Rev. 3
COLLECTOR
R1
R2
EMITTER
Ratings
390
24
500
300
46
31
±10
250
1.67
-40 to 175
-40 to 175
300
260
4
Units
V
V
mJ
mJ
A
A
V
W
W/°C
°C
°C
°C
°C
kV
Publication Order Number:
ISL9V5036S3S/D


  ON Semiconductor Electronic Components Datasheet  

ISL9V5036S3S Datasheet

N-Channel IGBT

No Preview Available !

Package Marking and Ordering Information
Device Marking
V5036S
V5036P
V5036S
V5036S
Device
ISL9V5036S3ST
ISL9V5036P3
ISL9V5036S3
ISL9V5036S3S
Package
TO-263AB
TO-220AA
TO-262AA
TO-263AB
Reel Size
330mm
Tube
Tube
Tube
Tape Width
24mm
N/A
N/A
N/A
Quantity
800
50
50
50
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Off State Characteristics
BVCER
BVCES
BVECS
BVGES
ICER
IECS
R1
R2
Collector to Emitter Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Gate to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
Emitter to Collector Leakage Current
Series Gate Resistance
Gate to Emitter Resistance
IC = 2mA, VGE = 0,
RG = 1KΩ, See Fig. 15
TJ = -40 to 150°C
IC = 10mA, VGE = 0,
RG = 0, See Fig. 15
TJ = -40 to 150°C
IC = -75mA, VGE = 0V,
TC = 25°C
IGES = ± 2mA
VCER = 250V,
RG = 1KΩ,
See Fig. 11
TC = 25°C
TC = 150°C
VEC = 24V, See TC = 25°C
Fig. 11
TC = 150°C
330
360
30
±12
-
-
-
-
-
10K
On State Characteristics
VCE(SAT) Collector to Emitter Saturation Voltage
VCE(SAT) Collector to Emitter Saturation Voltage
Dynamic Characteristics
IC = 10A,
VGE = 4.0V
IC = 15A,
VGE = 4.5V
TC = 25°C,
See Fig. 4
TC = 150°C
-
-
QG(ON) Gate Charge
VGE(TH) Gate to Emitter Threshold Voltage
VGEP Gate to Emitter Plateau Voltage
IC = 10A, VCE = 12V,
VGE = 5V, See Fig. 14
IC = 1.0mA,
VCE = VGE,
See Fig. 10
TC = 25°C
TC = 150°C
IC = 10A,
VCE = 12V
-
1.3
0.75
-
Switching Characteristics
td(ON)R
trR
td(OFF)L
tfL
SCIS
Current Turn-On Delay Time-Resistive
Current Rise Time-Resistive
Current Turn-Off Delay Time-Inductive
Current Fall Time-Inductive
Self Clamped Inductive Switching
VCE = 14V, RL = 1Ω,
VGE = 5V, RG = 1K
TJ = 25°C, See Fig. 12
VCE = 300V, L = 2mH,
VGE = 5V, RG = 1K
TJ = 25°C, See Fig. 12
TJ = 25°C, L = 670 µH,
RG = 1KΩ, VGE = 5V, See
Fig. 1 & 2
-
-
-
-
-
Typ Max Units
360 390
V
390 420
V
- -V
±14 -
V
- 25 µA
- 1 mA
- 1 mA
- 40 mA
75 -
- 30K
1.17
1.50
1.60
1.80
V
V
32 - nC
- 2.2
- 1.8
3.0 -
V
V
V
0.7
2.1
10.8
2.8
-
4
7
15
15
500
µs
µs
µs
µs
mJ
Thermal Characteristics
RθJC Thermal Resistance Junction-Case
TO-263, TO-220, TO-262
www.onsemi.com
2
- - 0.6 °C/W


Part Number ISL9V5036S3S
Description N-Channel IGBT
Maker ON Semiconductor
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ISL9V5036S3S Datasheet PDF






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