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  ON Semiconductor Electronic Components Datasheet  

J211-D74Z Datasheet

N-Channel RF Amplifier

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J211 / MMBFJ211
N-Channel RF Amplifier
Description
This device is designed for HF/VHF mixer/amplifier
and applications where process 50 is not adequate.
Sufficient gain and low-noise for sensitive receivers.
Sourced from process 90.
123
Straight Lead
Bulk Packing
TO-92
1. Drain
12
3
2. Source
3. Gate
Bent Lead
Tape & Reel
Ammo Packing
Figure 1. J211 Device Package
G
SOT-23
S
Note: Source & Drain
D
are interchangeable
Figure 2. MMBFJ211 Device Package
Ordering Information
Part Number
J211-D74Z
MMBFJ211
Top Mark
J211
62W
Package
TO-92 3L
SOT-23 3L
Packing Method
Ammo
Tape and Reel
© 1997 Semiconductor Components Industries, LLC.
September-2017, Rev. 2
Publication Order Number:
J211-D74Z/D


  ON Semiconductor Electronic Components Datasheet  

J211-D74Z Datasheet

N-Channel RF Amplifier

No Preview Available !

Absolute Maximum Ratings(1), (2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VDG
VGS
IGF
TJ, TSTG
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
Operating and Storage Junction Temperature Range
25
V
-25
V
10
mA
-55 to 150
°C
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low-
duty-cycle operations.
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Max.
J211(3)
MMBFJ211(3)
Unit
Total Device Dissipation
PD
Derate Above 25°C
350
225
mW
2.8
1.8
mW/°C
RθJC
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
125
°C/W
357
556
°C/W
Note:
3. Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead minimum 6cm2.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Off Characteristics
V(BR)GSS Gate-Source Breakdown Voltage IG = 1.0 μA, VDS = 0
IGSS
Gate Reverse Current
VGS = 15 V, VDS = 0
VGS(off) Gate-Source Cut-Off Voltage
VDS = 15 V, ID = 1.0 nA
On Characteristics
IDSS
Zero-Gate Voltage Drain Current(4) VDS = 15 V, VGS = 0
Small Signal Characteristics
gfs
Common Source Forward
Transconductance
VDS = 15 V, VGS = 0,
f = 1.0 kHz
goss
Common Source Output
Conductance
VDS = 15 V, VGS = 0,
f = 1.0 kHz
Note:
4. Pulse test: pulse width 300 μs
Min.
-25
-2.5
7.0
7000
Max.
-100
-4.5
20
Unit
V
pA
V
mA
12000
200
μmhos
μmhos
www.onsemi.com
2


Part Number J211-D74Z
Description N-Channel RF Amplifier
Maker ON Semiconductor
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J211-D74Z Datasheet PDF






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