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  ON Semiconductor Electronic Components Datasheet  

KA5M02659RN Datasheet

Power Switch

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KA5x02xx-SERIES
KA5H0265RC, KA5M0265R, KA5L0265R,
KA5H02659RN/KA5M02659RN, KA5H0280R,
KA5M0280R
Power Switch
Features
• Precision Fixed Operating Frequency (100/67/50kHz)
• Low Start-up Current (Typ. 100uA)
• Pulse by Pulse Current Limiting
• Over Load Protection
• Over Voltage Protection (Min. 25V)
• Internal Thermal Shutdown Function
• Under Voltage Lockout
• Internal High Voltage Sense FET
• Auto-Restart Mode
Description
The Power Switch product family is specially designed for
an off-line SMPS with minimal external components. The
Power Switch consist of high voltage power SenseFET and
current mode PWM IC. Included PWM controller features
integrated fixed oscillator, under voltage lock out, leading edge
blanking, optimized gate turn-on/turn-off driver, thermal shut
down protection, over voltage protection, and temperature
compensated precision current sources for loop
compensation and fault protection circuitry-compared to
discrete MOSFET and controller or RCC switching converter
solution. The Power Switch can reduce total component count,
design size, weight and at the same time increase efficiency,
productivity, and system reliability. It has a basic platform
well suited for cost-effective design in either a flyback
converter or a forward converter.
TO-220F-4L
8-DIP
TO220-5L
Internal Block Diagram
1
1. GND
2. Drain
3. Vcc
4. FB
VCC
* Soft Start
uA
FB
32V
5V
Internal
Vref
bias
Good
logic
5V
5µA
7.5V
27V
OSC
S
Q
R
1mA 2.5R
9V 1R
+
L.E.B
0.1V
+
+
Thermal S/D
OVER VOLTAGE S/D
S
Q
R
Power on reset
* KA5H0265RC
©2003 Semiconductor Components Industries, LLC.
October-2017, Rev. 2
1
1
1.6.7.8. Drain
1. Drain
2. GND
2. GND
3. Vcc
3. Vcc
4. FB
4. FB
5. NC
5. S/S
SFET
DRAIN
GND
Publication Order Number:
KA5L0265R/D


  ON Semiconductor Electronic Components Datasheet  

KA5M02659RN Datasheet

Power Switch

No Preview Available !

KA5X02XX-SERIES
Absolute Maximum Ratings
(Ta=25°C, unless otherwise specified)
Characteristic
KA5x0265xRx
Drain-Gate Voltage (RGS=1M)
Gate-Source (GND) Voltage
Drain Current Pulsed (1)
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Single Pulsed Avalanche Energy (2)
Maximum Supply Voltage
Analog Input Voltage Range
Total Power Dissipation
Operating Junction Temperature.
Operating Ambient Temperature.
Storage Temperature Range.
KA5x0280R
Drain-Gate Voltage (RGS=1M)
Gate-Source (GND) Voltage
Drain Current Pulsed (1)
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Single Pulsed Avalanche Energy (2)
Maximum Supply Voltage
Analog Input Voltage Range
Total Power Dissipation
Operating Junction Temperature.
Operating Ambient Temperature.
Storage Temperature Range.
Symbol
VDGR
VGS
IDM
ID
ID
EAS
VCC,MAX
VFB
PD
Darting
TJ
TA
TSTG
VDGR
VGS
IDM
ID
ID
EAS
VCC,MAX
VFB
PD
Darting
TJ
TA
TSTG
Note:
1. Repetitive rating: Pulse width limited by maximum junction temperature
2. L = 51mH, starting Tj = 25°C
Value
650
±30
8.0
2.0
1.3
68
30
-0.3 to VSD
42
0.33
+160
-25 to +85
-55 to +150
800
±30
8.0
2.0
1.3
90
30
-0.3 to VSD
35
0.28
+160
-25 to +85
-55 to +150
Unit
V
V
ADC
ADC
ADC
mJ
V
V
W
W/°C
°C
°C
°C
V
V
ADC
ADC
ADC
mJ
V
V
W
W/°C
°C
°C
°C
www.onsemi.com
2


Part Number KA5M02659RN
Description Power Switch
Maker ON Semiconductor
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KA5M02659RN Datasheet PDF






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