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  ON Semiconductor Electronic Components Datasheet  

L1N06C Datasheet

Power MOSFET

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MLD1N06CL
Power MOSFET 1 Amp, 62
Volts, Logic Level
NChannel DPAK
The MLD1N06CL is designed for applications that require a rugged
power switching device with short circuit protection that can be
directly interfaced to a microcontrol unit (MCU). Ideal applications
include automotive fuel injector driver, incandescent lamp driver or
other applications where a high inrush current or a shorted load
condition could occur.
This Logic Level Power MOSFET features current limiting for
short circuit protection, integrated GateSource clamping for ESD
protection and integral GateDrain clamping for overvoltage
protection and technology for low onresistance. No additional gate
series resistance is required when interfacing to the output of a MCU,
but a 40 kW gate pulldown resistor is recommended to avoid a floating
gate condition.
The internal GateSource and GateDrain clamps allow the device
to be applied without use of external transient suppression
components. The GateSource clamp protects the MOSFET input
from electrostatic voltage stress up to 2.0 kV. The GateDrain clamp
protects the MOSFET drain from the avalanche stress that occurs with
inductive loads. Their unique design provides voltage clamping that is
essentially independent of operating temperature.
Features
PbFree Package is Available
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
DraintoSource Voltage
DraintoGate Voltage (RGS = 1.0 MW)
GatetoSource Voltage
Continuous
Drain Current Continuous
Single Pulse
Total Power Dissipation
Operating and Storage Temperature Range
Electrostatic Discharge Voltage
(Human Model)
VDSS
VDGR
VGS
IDIDM
PD
TJ, Tstg
ESD
Clamped
Clamped
±10
Selflimited
1.8
40
50 to 150
2.0
Vdc
Vdc
Vdc
Adc
Apk
W
°C
kV
THERMAL CHARACTERISTICS
Thermal Resistance
JunctiontoCase
JunctiontoAmbient (Note 1)
JunctiontoAmbient (Note 2)
RqJC
RRqqJJAA
°C/W
3.12
100
71.4
Maximum Lead Temperature for Soldering
Purposes, 1/8from case for 5 seconds
TL
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
2. When surface mounted to an FR4 board using the 0.5 sq.in. drain pad size.
www.onsemi.com
V(BR)DSS
62 V (Clamped)
RDS(on) TYP
750 mW
ID MAX
1.0 A
NChannel D
R1
G
R2
4
12
3
CASE 369C
DPAK
STYLE 2
S
MARKING
DIAGRAM
YWW
L1N
06CG
Y
WW
L1N06C
G
= Year
= Work Week
= Device Code
= PbFree Package
ORDERING INFORMATION
Device
Package
Shipping
MLD1N06CLT4
DPAK 2500 Tape & Reel
MLD1N06CLT4G DPAK 2500 Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2008
April, 2017 Rev. 5
1
Publication Order Number:
MLD1N06CL/D


  ON Semiconductor Electronic Components Datasheet  

L1N06C Datasheet

Power MOSFET

No Preview Available !

MLD1N06CL
UNCLAMPED DRAINTOSOURCE AVALANCHE CHARACTERISTICS
Rating
Symbol
Single Pulse DraintoSource Avalanche Energy Starting TJ = 25°C
EAS
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
DraintoSource Breakdown Voltage (Internally Clamped)
(ID = 20 mAdc, VGS = 0 Vdc)
(ID = 20 mAdc, VGS = 0 Vdc, TJ = 150°C)
Zero Gate Voltage Drain Current
(VDS = 45 Vdc, VGS = 0 Vdc)
(VDS = 45 Vdc, VGS = 0 Vdc, TJ = 150°C)
GateSource Leakage Current
(VG = 5.0 Vdc, VDS = 0 Vdc)
(VG = 5.0 Vdc, VDS = 0 Vdc, TJ = 150°C)
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
(ID = 250 mAdc, VDS = VGS)
(ID = 250 mAdc, VDS = VGS, TJ = 150°C)
Static DraintoSource OnResistance
(ID = 1.0 Adc, VGS = 4.0 Vdc)
(ID = 1.0 Adc, VGS = 5.0 Vdc)
((IIDD
=
=
1.0
1.0
Adc,
Adc,
VVGGSS
=
=
4.0
5.0
Vdc,
Vdc,
TTJJ
=
=
150°C)
150°C)
Static SourcetoDrain Diode Voltage (IS = 1.0 Adc, VGS = 0 Vdc)
Static Drain Current Limit
(VGS = 5.0 Vdc, VDS = 10 Vdc)
(VGS = 5.0 Vdc, VDS = 10 Vdc, TJ = 150°C)
Forward Transconductance (ID = 1.0 Adc, VDS = 10 Vdc)
RESISTIVE SWITCHING CHARACTERISTICS (Note 4)
TurnOn Delay Time
Rise Time
TurnOff Delay Time
(VDD = 25 Vdc, ID = 1.0 Adc,
VGS(on) = 5.0 Vdc, RGS = 50 W)
Fall Time
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from drain lead 0.25from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25from package to source bond pad)
3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
4. Switching characteristics are independent of operating junction temperature.
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
VSD
ID(lim)
gFS
td(on)
tr
td(off)
tf
LD
LS
Value
80
Unit
mJ
Min Typ Max Unit
Vdc
59 62 65
59 62 65
mAdc
0.6 5.0
6.0 20
mAdc
0.5 5.0
1.0 20
Vdc
1.0 1.5 2.0
0.6 1.6
W
0.63 0.75
0.59
1.1
1.0
0.75
1.9
1.8
1.1 1.5 Vdc
Adc
2.0 2.3 2.75
1.1 1.3 1.8
1.0 1.4
mhos
1.2 2.0 ms
4.0 6.0
4.0 6.0
3.0 5.0
nH
4.5
nH
7.5
www.onsemi.com
2


Part Number L1N06C
Description Power MOSFET
Maker ON Semiconductor
Total Page 7 Pages
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