L1N06C - Power MOSFET

Product Overview

ON Semiconductor

Part number	L1N06C
Manufacturer	ON Semiconductor
File Size	156.15 KB
Description	Power MOSFET
Datasheet	L1N06C Datasheet
Additional preview pages of the L1N06C datasheet.

current limiting for short circuit protection, integrated Gate.
Source clamping for ESD protection and integral Gate.
Drain clamping for over.
voltage protection and technology for low on.
resistance. No additional gate series resistance is required when interfacing to the output of a MCU, but a 40 kW gate pulldown resistor is recommended to avoid a floating gate condition. The internal Gate.
Source and Gate.
Drain clamps allow the device to be applied w.

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Published: Oct 24, 2017 |