L1N06C - Power MOSFET

ON Semiconductor

Datasheet Details

current limiting for short circuit protection, integrated Gate.
Source clamping for ESD protection and integral Gate.
Drain clamping for over.
voltage protection and technology for low on.
resistance. No additional gate series resistance is required when interfacing to the output of a MCU, but a 40 kW gate pulldown resistor is recommended to avoid a floating gate condition. The internal Gate.
Source and Gate.
Drain clamps allow the device to be applied w.

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