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  ON Semiconductor Electronic Components Datasheet  

LE2416DXA Datasheet

EEPROM

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LE2416DXA
16 kb I2C CMOS Serial EEPROM
Overview
The LE2416DXA is two-wire serial interface EEPROM (Electrically
Erasable and Programmable ROM). This device realizes high speed and a
high level reliability by high performance CMOS EEPROM technology.
This device is compatible with I2C memory protocol, therefore it is best
suited for application that requires re-writable nonvolatile parameter
memory.
www.onsemi.com
Function
 Capacity : 16k bits (2k 8 bits)
Single supply voltage : 1.7 V to 3.6 V
Operating temperature : 40ºC to +85ºC
Interface : Two wire serial interface (I2C Bus*)
WLCSP6, 0.80x1.20
 Operating clock frequency : 400 kHz (Fast), 1000 kHz (Fast-Plus)
Low Power consumption
: Standby : 2 µA (max.)
: Active (Read, 400 kHz) : 0.5 mA (max.)
Active (Read, 1000 kHz) : 2.0 mA (max.)
Automatic page write mode : 16 Bytes
Read mode : Sequential Read and random read
Slave Address : Slave address in 7 bit format is 050 or 054 depending of polarity of pin B3 (TEST)
Erase/Write cycles : 106 cycles (Page Write)
Data Retention : 20 years
High reliability : Adopts proprietary symmetric memory array configuration (USP6947325)
Hardware write protect feature
Noise filters connected to SCL and SDA pins
Incorporates a feature to prohibit write operations under low voltage conditions.
Package : LE2416DXA WLP6(0.801.20) 0.33 mm height
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter
Symbol
Supply voltage
DC input voltage
Over-shoot voltage
Storage temperature
Tstg
Conditions
Ratings
0.5 to +4.6
0.5 to VCC+0.5
1.0 to VCC+1.0
65 to +150
Unit
V
V
V
C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
* This product is licensed from Silicon Storage Technology, Inc. (USA).
ORDERING INFORMATION
See detailed ordering and shipping information on page 17 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
August 2016 - Rev. 1
1
Publication Order Number :
LE2416DXA/D


  ON Semiconductor Electronic Components Datasheet  

LE2416DXA Datasheet

EEPROM

No Preview Available !

Recommended Operating Conditions
Parameter
Operating supply voltage
Operating temperature
Symbol
LE2416DXA
Conditions
min
1.7
40
Ratings
typ
max
3.6
+85
Unit
V
C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended
Operating Ranges limits may affect device reliability.
DC Electrical Characteristics
Parameter
Symbol
Supply current at reading
Supply current at writing
Standby current
Input leakage current
Output leakage current
Input Low voltage
Input High voltage
Output Low voltage
ICC1
ICC2
ISB
ILI
ILO
VIL
VIH
VOL2
VOL1
Conditions
f = 400 kHz, VCC = VCC Max
f =1000 kHz, VCC = VCC Max
f = 1000 kHz / 400 kHz,
tWC = 5 ms, VCC = VCC Max
WP = VCC2 = VCC
VIN = VCC or VSS
VIN = VSS to VCC, VCC = VCC Max
VIN = VSS to VCC, VCC = VCC Max
IOL = 1.0 mA, VCC = 1.7 V
IOL = 1.2 mA, VCC = 2.0 V
IOL = 2.1 mA, VCC = 2.0 V
IOL = 3.0 mA, VCC = 2.5 V
Spec.
min typ
2.0
2.0
VCC 0.7
max
0.5
2.0
3.0
2
Unit
mA
mA
µA
+2.0
+2.0
VCC 0.3
µA
µA
V
V
0.2 V
0.4 V
Capacitance at Ta = 25C, f = 1 MHz
Parameter
In/Output pin capacitance
Input pin capacitance
Symbol
CI/O
CI
VI/O = 0 V (SDA)
VIN = 0 V
Conditions
max
10
10
Unit
pF
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
2


Part Number LE2416DXA
Description EEPROM
Maker ON Semiconductor
Total Page 17 Pages
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