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LE25S81MC Datasheet

8M-bit (1024K x 8) Serial Flash Memory

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Ordering number : EN*A2287
LE25S81MC
Advance Information
CMOS LSI
8M-bit (1024K x 8) Serial Flash Memory
http://onsemi.com
Overview
The LE25S81MC is a SPI bus flash memory device with a 8M bit (1024K × 8-bit) configuration. It uses a single 1.8V
power supply. While making the most of the features inherent to a serial flash memory device, the LE25S81MC is
housed in an 8-pin ultra-miniature package. All these features make this device ideally suited to storing program in
applications such as portable information devices, which are required to have increasingly more compact dimensions.
The LE25S81MC also has a small sector erase capability which makes the device ideal for storing parameters or data
that have fewer rewrite cycles and conventional EEPROMs cannot handle due to insufficient capacity.
Function
Read/write operations enabled by single 1.8V power supply : 1.65 to 1.95V supply voltage range
Operating frequency
: 40MHz
Temperature range
: –40 to +90°C
Serial interface
: SPI mode 0, mode 3 supported
Sector size
: 4K bytes/small sector, 64K bytes/sector
Small sector erase, sector erase, chip erase functions
Page program function (256 bytes / page)
Block protect function
Data retention period
: 20 years
Status functions
: Ready/busy information, protect information
Highly reliable read/write
Number of rewrite times : 100,000 times
Small sector erase time : 40ms (typ.), 150ms (max.)
Sector erase time
: 80ms (typ.), 250ms (max.)
Chip erase time
: 500ms (typ.), 6.0s (max.)
Page program time
: 0.3ms/256 bytes (typ.), 0.5ms/256 bytes (max.)
Package
: SOP8J, CASE 751CU
* This product is licensed from Silicon Storage Technology, Inc. (USA).
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
ORDERING INFORMATION
See detailed ordering and shipping information on page 23 of this data sheet.
Semiconductor Components Industries, LLC, 2014
March, 2014 Ver. 2.12
SOP8J(200mil)
32814HKPC No.A2287-1/23


  ON Semiconductor Electronic Components Datasheet  

LE25S81MC Datasheet

8M-bit (1024K x 8) Serial Flash Memory

No Preview Available !

LE25S81MC
Specifications
Absolute Maximum Ratings
Parameter
Maximum supply voltage
DC voltage (all pins)
Storage temperature
Symbol
Tstg
Conditions
With respect to VSS
With respect to VSS
Ratings
0.5 to +2.4
0.5 to VDD+0.5
55 to +150
unit
V
V
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Operating Conditions
Parameter
Operating supply voltage
Operating ambient temperature
Symbol
Write operation
Read operation
Conditions
Ratings
1.65 to 1.95
40 to +90
40 to +90
unit
V
°C
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended
Operating Ranges limits may affect device reliability.
Allowable DC Operating Conditions
Parameter
Read mode operating current
Write mode operating current
(erase+page program)
CMOS standby current
Power-down standby current
Input leakage current
Output leakage current
Input low voltage
Input high voltage
Output low voltage
Output high voltage
Symbol
ICCR
ICCW
ISB
IDSB
ILI
ILO
VIL
VIH
VOL
VOH
Conditions
SCK = 0.1VDD/0.9VDD,
HOLD = WP = 0.9VDD,
SO = open
Single
Dual *1
tSSE = tSE = tCHE = typ., tPP = max
33MHz
40MHz
40MHz
min
Ratings
typ
max
6
8
10
40
unit
mA
mA
mA
mA
CS = VDD, HOLD = WP = VDD,
SI = VSS/VDD, SO = open
CS = VDD, HOLD = WP = VDD,
SI = VSS/VDD, SO = open
IOL = 100μA, VDD = VDD min
IOL = 1.6mA, VDD = VDD min
IOH = 100μA, VDD = VDD min
50 μA
15 μA
2 μA
2 μA
0.3
0.7VDD
0.3VDD
VDD+0.3
0.2
0.4
V
V
V
VCC0.2
V
*1: Dual Read is not supported on LE25S81MC.
Data hold, Rewriting frequency
Parameter
Rewriting frequency
Data hold
Conditions
Program/Erase
Status resister write
min
100,000
1,000
20
max
unit
times/
Sector
year
Pin Capacitance at Ta = 25°C, f = 1MHz
Parameter
Symbol
Conditions
Ratings
max
unit
Output pin capacitance
CSO
VSO = 0V
12 pF
Input pin capacitance
CIN
VIN = 0V
6 pF
Note: These parameter values do not represent the results of measurements undertaken for all devices but rather values for
some of the sampled devices.
No.A2287-2/23


Part Number LE25S81MC
Description 8M-bit (1024K x 8) Serial Flash Memory
Maker ON Semiconductor
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