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  ON Semiconductor Electronic Components Datasheet  

MAC12MG Datasheet

Triacs

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MAC12D, MAC12M, MAC12N
Triacs
Silicon Bidirectional Thyristors
Designed for high performance full−wave ac control applications
where high noise immunity and commutating di/dt are required.
Features
Blocking Voltage to 800 Volts
On−State Current Rating of 12 Amperes RMS at 70°C
Uniform Gate Trigger Currents in Three Quadrants, Q1, Q2, and Q3
High Immunity to dv/dt − 250 V/ms Minimum at 125°C
High Commutating di/dt − 6.5 A/ms Minimum at 125°C
Industry Standard TO−220 Package
High Surge Current Capability − 100 Amperes
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Peak Repetitive Off−State Voltage (Note 1)
(TJ = −40 to 125°C, Sine Wave,
50 to 60 Hz, Gate Open)
MAC12D
MAC12M
MAC12N
VDRM,
VRRM
400
600
800
Unit
V
On-State RMS Current
(All Conduction Angles; TC = 70°C)
Peak Non-Repetitive Surge Current
(One Full Cycle, 60 Hz, TJ = 125°C)
Circuit Fusing Consideration (t = 8.33 ms)
IT(RMS)
ITSM
I2t
12 A
100 A
41 A2sec
Peak Gate Power
(Pulse Width 1.0 ms, TC = 80°C)
PGM 16 W
Average Gate Power
(t = 8.3 ms, TC = 80°C)
PG(AV)
0.35
W
Operating Junction Temperature Range
TJ −40 to +125 °C
Storage Temperature Range
Tstg −40 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
www.onsemi.com
TRIACS
12 AMPERES RMS
400 thru 800 VOLTS
MT2
MT1
G
MARKING
DIAGRAM
1
23
TO−220
CASE 221A
STYLE 4
MAC12xG
AYWW
x = D, M, or N
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
PIN ASSIGNMENT
1 Main Terminal 1
2 Main Terminal 2
3 Gate
4 Main Terminal 2
ORDERING INFORMATION
Device
MAC12DG
Package
TO−220
(Pb−Free)
Shipping
50 Units / Rail
MAC12MG
TO−220
(Pb−Free)
50 Units / Rail
MAC12NG
TO−220
(Pb−Free)
50 Units / Rail
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 5
1
Publication Order Number:
MAC12/D


  ON Semiconductor Electronic Components Datasheet  

MAC12MG Datasheet

Triacs

No Preview Available !

MAC12D, MAC12M, MAC12N
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Case
Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes 1/8from Case for 10 Seconds
Symbol
RqJC
RqJA
TL
Value
2.2
62.5
260
Unit
°C/W
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol Min Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM, Gate Open)
ON CHARACTERISTICS
TJ = 25°C
TJ = 125°C
IDRM,
IRRM
− − 0.01 mA
− − 2.0
Peak On−State Voltage (Note 2) (ITM = ±17 A)
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
VTM
− 1.85
V
IGT mA
5.0 13 35
5.0 13 35
5.0 13 35
Hold Current (VD = 12 V, Gate Open, Initiating Current = ±150 mA)
Latch Current (VD = 24 V, IG = 35 mA)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
IH − 20 40 mA
IL mA
− 20 50
− 30 80
− 20 50
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
VGT
V
0.5 0.78 1.5
0.5 0.70 1.5
0.5 0.71 1.5
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current
(VD = 400 V, ITM = 4.4A, Commutating dv/dt = 18 V/ms, Gate Open,
TJ = 125°C, f = 250 Hz, No Snubber)
(di/dt)c 6.5 −
− A/ms
Critical Rate of Rise of Off−State Voltage
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
dv/dt
250 500
V/ms
Repetitive Critical Rate of Rise of On-State Current
IPK = 50 A; PW = 40 msec; diG/dt = 200 mA/msec; f = 60 Hz
di/dt − − 10 A/ms
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%.
www.onsemi.com
2


Part Number MAC12MG
Description Triacs
Maker ON Semiconductor
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