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  ON Semiconductor Electronic Components Datasheet  

MAC15SD Datasheet

Sensitive Gate Triacs

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MAC15SD, MAC15SM,
MAC15SN
Preferred Device
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
Designed for industrial and consumer applications for full wave
control of AC loads such as appliance controls, heater controls, motor
controls, and other power switching applications.
Features
Sensitive Gate allows Triggering by Microcontrollers and other
Logic Circuits
High Immunity to dv/dt − 25 V/ms minimum at 110°C
High Commutating di/dt − 8.0 A/ms minimum at 110°C
Maximum Values of IGT, VGT and IH Specified for Ease of Design
On-State Current Rating of 15 Amperes RMS at 70°C
High Surge Current Capability − 120 Amperes
Blocking Voltage to 800 Volts
Rugged, Economical TO−220AB Package
Uniform Gate Trigger Currents in Three Quadrants, Q1, Q2, and Q3
Pb−Free Packages are Available*
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Peak Repetitive Off−State Voltage (Note 1)
(TJ = −40 to 110°C, Sine Wave, 50 to
60 Hz, Gate Open)
MAC15SD
MAC15SM
MAC15SN
VDRM,
VRRM
400
600
800
V
On−State RMS Current
(Full Cycle Sine Wave, 60Hz, TJ = 70°C)
IT(RMS)
15
A
Peak Non-repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
TJ = 110°C)
Circuit Fusing Consideration (t = 8.3 ms)
ITSM
I2t
120 A
60 A2s
Peak Gate Power
(Pulse Width 1.0 ms, TC = 70°C)
PGM
20 W
Average Gate Power (t = 8.3 ms, TC = 70°C) PG(AV) 0.5 W
Operating Junction Temperature Range
TJ −40 to +110 °C
Storage Temperature Range
Tstg −40 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
TRIACS
15 AMPERES RMS
400 thru 800 VOLTS
MT2
MT1
G
MARKING
DIAGRAM
123
TO−220AB
CASE 221A−09
STYLE 4
MAC15SxG
AYWW
x = D, M, or N
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
PIN ASSIGNMENT
1 Main Terminal 1
2 Main Terminal 2
3 Gate
4 Main Terminal 2
ORDERING INFORMATION
Device
Package
Shipping
MAC15SD
TO−220AB
50 Units / Rail
MAC15SDG
MAC15SM
TO−220AB
(Pb−Free)
TO−220AB
50 Units / Rail
50 Units / Rail
MAC15SMG
MAC15SN
TO−220AB
(Pb−Free)
TO−220AB
50 Units / Rail
50 Units / Rail
MAC15SNG
TO−220AB
(Pb−Free)
50 Units / Rail
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2005
December, 2005 − Rev. 5
1
Publication Order Number:
MAC15S/D


  ON Semiconductor Electronic Components Datasheet  

MAC15SD Datasheet

Sensitive Gate Triacs

No Preview Available !

MAC15SD, MAC15SM, MAC15SN
THERMAL CHARACTERISTICS
Thermal Resistance,
Characteristic
Junction−to−Case
Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes 1/8from Case for 10 Seconds
Symbol
RqJC
RqJA
TL
Value
2.0
62.5
260
Unit
°C/W
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol Min Typ
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
ON CHARACTERISTICS
Peak On-State Voltage (Note 2) (ITM = "21A)
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
TJ = 25°C
TJ = 110°C
IDRM,
IRRM
VTM
IGT
−−
−−
−−
− 2.0
− 3.0
− 3.0
Hold Current (VD = 12 V, Gate Open, Initiating Current = "150mA)
Latching Current (VD = 24V, IG = 5mA)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
IH − 3.0
IL
− 5.0
− 10
− 5.0
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
VGT
0.45 0.62
0.45 0.60
0.45 0.65
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current
(VD = 400V, ITM = 3.5A, Commutating dv/dt = 10Vm/sec,
Gate Open, TJ = 110°C, f= 500Hz, Snubber: CS = 0.01 mF, RS =15W, see Figure 15)
Critical Rate of Rise of Off-State Voltage
(VD = Rate VDRM, Exponential Waveform, RGK = 510W, TJ = 110°C)
2. Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%.
(di/dt)c
8.0 10
dv/dt
25 75
Max
0.01
2.0
1.8
5.0
5.0
5.0
10
15
20
15
1.5
1.5
1.5
Unit
mA
V
mA
mA
mA
V
A/ms
V/ms
http://onsemi.com
2


Part Number MAC15SD
Description Sensitive Gate Triacs
Maker ON Semiconductor
PDF Download

MAC15SD Datasheet PDF






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