MAC16HCMG - Triacs / Silicon Bidirectional Thyristors

onsemi

Download the MAC16HCMG datasheet PDF. This datasheet also covers the MAC16HCDG variant, as both devices belong to the same triacs / silicon bidirectional thyristors family and are provided as variant models within a single manufacturer datasheet.

Key Features

High Commutating di/dt and High Immunity to dv/dt @ 125°C.
Uniform Gate Trigger Currents in Three Quadrants, Q1, Q2, and Q3.
Blocking Voltage to 800 Volts.
On.
State Current Rating of 16 Amperes RMS at 80°C.
High Surge Current Capability.
150 Amperes.
Industry Standard TO.
220 Package for Ease of Design.
Glass Passivated Junctions for Reliability and Uniformity.
These Devices are Pb.
Free and a.

📥 Download Datasheet

MAC16HCMG triacs / silicon bidirectional thyristors by onsemi - Datasheet Preview — Note: The manufacturer provides a single datasheet file (MAC16HCDG-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	MAC16HCMG
Manufacturer	onsemi
File Size	114.99 KB
Description	Triacs / Silicon Bidirectional Thyristors
Datasheet	MAC16HCMG Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
MAC16HCMG	TRIAC	Littelfuse
MAC16HCDG	TRIAC	Littelfuse
MAC16HCNG	TRIAC	Littelfuse
MAC16	Triac	Motorola
MAC160	MAC160	Tesla

Other Datasheets by onsemi

Part Number	Description
MAC16HCM	Triacs Silicon Bidirectional Thyristors
MAC16HCD	Triacs Silicon Bidirectional Thyristors
MAC16HCDG	Triacs / Silicon Bidirectional Thyristors
MAC16HCN	Triacs Silicon Bidirectional Thyristors
MAC16HCNG	Triacs / Silicon Bidirectional Thyristors

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

MAC16HCDG, MAC16HCMG, MAC16HCNG Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as motor controls, heating controls or dimmers; or wherever full−wave, silicon gate−controlled devices are needed.