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  ON Semiconductor Electronic Components Datasheet  

MAC4SN Datasheet

SENSITIVE GATE TRIACS

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MAC4SN pdf
MAC4SM, MAC4SN
Preferred Device
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
Designed for industrial and consumer applications for full wave
control of ac loads such as appliance controls, heater controls, motor
controls, and other power switching applications.
Sensitive Gate Allows Triggering by Microcontrollers and other
Logic Circuits
High Immunity to dv/dt — 50 V/m s Minimum at 125_ C
Commutating di/dt — 3.0 A/ms Minimum at 125_ C
www.DataSheet4U.Mcominimum and Maximum Values of IGT, VGT and IH Specified for
Ease of Design
On-State Current Rating of 4 Amperes RMS at 100_ C
High Surge Current Capability — 40 Amperes
Blocking Voltage to 800 Volts
Rugged, Economical TO220AB Package
Operational in Three Quadrants: Q1, Q2, and Q3
Device Marking: Logo, Device Type, e.g., MAC4SM, Date Code
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Peak Repetitive Off–State Voltage(1)
(TJ = –40 to 125°C, Sine Wave,
50 to 60 Hz, Gate Open)
MAC4SM
MAC4SN
VDRM,
VRRM
600
800
Unit
Volts
On-State RMS Current
(Full Cycle Sine Wave, 60 Hz,
TC = 100°C)
IT(RMS) 4.0 Amps
Peak Non-Repetitive Surge Current
(One Full Cycle, 60 Hz, TJ = 125°C)
Circuit Fusing Consideration
(t = 8.33 ms)
ITSM
I2t
40 Amps
6.6 A2sec
Peak Gate Power
(Pulse Width 1.0 µs, TC = 100°C)
Average Gate Power
(t = 8.3 ms, TC = 100°C)
Operating Junction Temperature Range
PGM
PG(AV)
TJ
0.5
0.1
– 40 to
+125
Watt
Watt
°C
Storage Temperature Range
Tstg
– 40 to
°C
+150
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
http://onsemi.com
TRIACS
4 AMPERES RMS
600 thru 800 VOLTS
MT2
MT1
G
4
1
2
3
TO–220AB
CASE 221A
STYLE 4
PIN ASSIGNMENT
1 Main Terminal 1
2 Main Terminal 2
3 Gate
4 Main Terminal 2
ORDERING INFORMATION
Device
Package
Shipping
MAC4SM
TO220AB
50 Units/Rail
MAC4SN
TO220AB
50 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 1999
February, 2000 – Rev. 1
1
Publication Order Number:
MAC4SM/D


  ON Semiconductor Electronic Components Datasheet  

MAC4SN Datasheet

SENSITIVE GATE TRIACS

No Preview Available !

MAC4SN pdf
MAC4SM, MAC4SN
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance — Junction to Case
— Junction to Ambient
Maximum Lead Temperature for Soldering Purposes 1/8from Case for 10 Seconds
Symbol
RθJC
RθJA
TL
Value
2.2
62.5
260
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
TJ = 25°C
TJ = 125°C
IDRM,
IRRM
ON CHARACTERISTICS
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Peak On-State Voltage(1)
(ITM = ± 6.0 A)
VTM
1.3
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 )
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
IGT
2.9
2.9
2.9
4.0
4.7
6.0
Holding Current
(VD = 12 V, Gate Open, Initiating Current = ±200 mA)
IH 2.0 5.0
Latching Current (VD = 12 V, IG = 10 mA)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
IL
— 6.0
— 15
— 6.0
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 )
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
VGT
0.5
0.5
0.5
0.7
.65
0.7
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current
(VD = 400 V, ITM = 3.5 A, Commutating dv/dt = 10 V/µs, Gate Open,
TJ = 125°C, f = 500 Hz, CL = 5.0 µF, LL = 20 mH, No Snubber)
(di/dt)c
3.0
4.0
Critical Rate of Rise of Off-State Voltage
(VD = 0.67 x Rated VDRM, Exponential Waveform,
Gate Open, TJ = 125°C)
dv/dt
50
150
Repetitive Critical Rate of Rise of On-State Current
IPK = 50 A; PW = 40 µsec; diG/dt = 200 mA/µsec; f = 60 Hz
di/dt —
(1) Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%.
Max
0.01
2.0
1.6
10
10
10
15
30
30
30
1.3
1.3
1.3
10
Unit
°C/W
°C
Unit
mA
V
mA
mA
mA
V
A/ms
V/µs
A/µs
http://onsemi.com
2


Part Number MAC4SN
Description SENSITIVE GATE TRIACS
Maker ON Semiconductor
Total Page 8 Pages
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