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  ON Semiconductor Electronic Components Datasheet  

MBR1045G Datasheet

Power Rectifiers

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MBR1035, MBR1045
SWITCHMODE
Power Rectifiers
Features and Benefits
Low Forward Voltage
Low Power Loss/High Efficiency
High Surge Capacity
175°C Operating Junction Temperature
10 A Total
PbFree Packages are Available*
Applications
Power Supply – Output Rectification
Power Management
Instrumentation
Mechanical Characteristics
Case: Epoxy, Molded
Epoxy Meets UL 94, V0 @ 0.125 in
Weight: 1.9 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperatures for Soldering Purposes: 260°C Max. for 10 Seconds
ESD Rating: Human Body Model 3B
Machine Model C
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIERS
10 AMPERES
35 to 45 VOLTS
3
1, 4
MARKING
4
DIAGRAM
1
3
TO220AC
CASE 221B
PLASTIC
AY WWG
B10x5
KA
A
Y
WW
G
B10x5
x
KA
= Assembly Location
= Year
= Work Week
= PbFree Package
= Device Code
= 3 or 4
= Diode Polarity
ORDERING INFORMATION
Device
Package
Shipping
MBR1035
TO220
50 Units/Rail
MBR1035G
TO220
(PbFree)
50 Units/Rail
MBR1045
TO220
50 Units/Rail
MBR1045G
TO220
(PbFree)
50 Units/Rail
© Semiconductor Components Industries, LLC, 2008
1
June, 2008 Rev. 8
Publication Order Number:
MBR1035/D


  ON Semiconductor Electronic Components Datasheet  

MBR1045G Datasheet

Power Rectifiers

No Preview Available !

MBR1035, MBR1045
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
MBR1035
MBR1045
VRRM
V
VRWM
VR
35
45
Average Rectified Forward Current
(TC = 135°C, Per Device)
Peak Repetitive Forward Current,
(Square Wave, 20 kHz, TC = 135°C)
NonRepetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IF(AV)
A
10
IFRM
10
A
IFSM
150
A
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
IRRM
1.0
A
Storage Temperature Range
Tstg
65 to +175
°C
Operating Junction Temperature (Note 1)
TJ
65 to +175
°C
Voltage Rate of Change
(Rated VR)
dv/dt
V/ms
10,000
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Maximum Thermal Resistance, JunctiontoCase
Maximum Thermal Resistance, JunctiontoAmbient
Conditions
Min. Pad
Min. Pad
Symbol
RqJC
RqJA
Max
2.0
60
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Instantaneous Forward Voltage (Note 2)
(iF = 10 Amps, Tj = 125°C)
(iF = 20 Amps, Tj = 125°C)
(iF = 20 Amps, Tj = 25°C)
Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, Tj = 125°C)
(Rated dc Voltage, Tj = 25°C)
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
Symbol
Min
Typical
Max
Unit
vF
V
0.55
0.57
0.67
0.72
0.78
0.84
iR
5.3
0.008
mA
15
0.1
http://onsemi.com
2


Part Number MBR1045G
Description Power Rectifiers
Maker ON Semiconductor
PDF Download

MBR1045G Datasheet PDF






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