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  ON Semiconductor Electronic Components Datasheet  

MBR1535CT Datasheet

Power Rectifier

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MBR1535CT, MBR1545CT
MBR1545CT is a Preferred Device
SWITCHMODE
Power Rectifier
. . . using the Schottky Barrier principle with a platinum barrier
metal. These state–of–the–art devices have the following features:
Center–Tap Configuration
Guardring for Stress Protection
Low Forward Voltage
150°C Operating Junction Temperature
Epoxy Meets UL94, VO at 1/8
Mechanical Characteristics:
Case: Epoxy, Molded
Weight: 1.9 grams (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Shipped 50 units per plastic tube
Marking: B1535, B1545
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Volta MBR1535CT
MBR1545CT
Average Rectified Forward Current
(Rated VR, TC = 105°C) Per Diode
Per Device
Peak Repetitive Forward Current
(Rated VR, Square Wave,
20 kHz, TC = 105°C) Per Diode
Non–Repetitive Peak Surge Current
(Surge Applied at Rated Load
Conditions Halfwave, Single
Phase, 60 Hz)
Peak Repetitive Reverse Surge
Current (2.0 ms, 1.0 kHz)
Storage Temperature Range
Operating Junction Temperature
Voltage Rate of Change (Rated VR)
Symbol
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
IRRM
Tstg
TJ
dv/dt
Value
35
45
7.5
15
15
150
1.0
–65 to +175
–65 to +150
1000
Unit
V
A
A
A
A
°C
°C
V/ms
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIERS
15 AMPERES
35 and 45 VOLTS
1
2, 4
3
4
1
2
3
TO–220AB
CASE 221A
PLASTIC
MARKING DIAGRAM
YY WW
B15x5
AKA
YY
WW
B15x5
x
AKA
= Year
= Work Week
= Device Code
= 3 or 4
= Diode Polarity
ORDERING INFORMATION
Device
Package
Shipping
MBR1535CT
TO–220
50 Units/Rail
MBR1545CT
TO–220
50 Units/Rail
© Semiconductor Components Industries, LLC, 2001
May, 2001 – Rev. 3
Preferred devices are recommended choices for future use
and best overall value.
1 Publication Order Number:
MBR1535CT/D


  ON Semiconductor Electronic Components Datasheet  

MBR1535CT Datasheet

Power Rectifier

No Preview Available !

MBR1535CT, MBR1545CT
THERMAL CHARACTERISTICS PER DIODE
Characteristic
Maximum Thermal Resistance, Junction to Case
Maximum Thermal Resistance, Junction to Ambient
ELECTRICAL CHARACTERISTICS PER DIODE
Maximum Instantaneous Forward Voltage (Note 1.)
(iF = 7.5 Amps, TC = 125°C)
(iF = 15 Amps, TC = 125°C)
(iF = 15 Amps, TC = 25°C)
Maximum Instantaneous Reverse Current (Note 1.)
(Rated dc Voltage, TC = 125°C)
(Rated dc Voltage, TC = 25°C)
1. Pulse Test: Pulse Width = 300 µs, Duty Cycle 2.0%
Symbol
RθJC
RθJA
VF
iR
Value
3.0
60
0.57
0.72
0.84
15
0.1
Unit
°C/W
°C/W
Volts
mA
http://onsemi.com
2


Part Number MBR1535CT
Description Power Rectifier
Maker ON Semiconductor
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MBR1535CT Datasheet PDF






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