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  ON Semiconductor Electronic Components Datasheet  

MBR1535CTG Datasheet

Switch-mode Power Rectifier

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MBR1535CTG,
MBR1545CTG
Switch-mode
Power Rectifier
Features and Benefits
Center−Tap Configuration
Low Forward Voltage
Low Power Loss / High Efficiency
High Surge Capacity
175°C Operating Junction Temperature
15 A Total (7.5 A Per Diode Leg)
These Devices are Pb−Free and are RoHS Compliant*
Applications
Power Supply − Output Rectification
Power Management
Instrumentation
Mechanical Characteristics
Case: Epoxy, Molded
Epoxy Meets UL 94, V−0 @ 0.125 in
Weight: 1.9 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
ESD Rating: Human Body Model = 3B
Machine Model = C
www.onsemi.com
SCHOTTKY BARRIER
RECTIFIERS
15 AMPERES
35 and 45 VOLTS
1
2, 4
3
MARKING
DIAGRAM
4
1
2
3
TO−220
CASE 221A
STYLE 6
AYWW
MBR15x5CTG
AKA
A
Y
WW
x
G
AKA
= Assembly Location
= Year
= Work Week
= 3 or 4
= Pb−Free Package
= Diode Polarity
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 9
1
Publication Order Number:
MBR1535CT/D


  ON Semiconductor Electronic Components Datasheet  

MBR1535CTG Datasheet

Switch-mode Power Rectifier

No Preview Available !

MBR1535CTG, MBR1545CTG
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage MBR1535CT
MBR1545CT
VRRM
VRWM
VR
35
45
V
Average Rectified Forward Current
(TC = 163°C)
Per Diode
Per Device
IF(AV)
A
7.5
15
Peak Repetitive Forward Current
(Square Wave, 20 kHz, TC = 161°C)
Per Diode
IFRM 15 A
Non−Repetitive Peak Surge Current
IFSM 150 A
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz)
IRRM 1.0 A
Storage Temperature Range
Tstg
−65 to +175
°C
Operating Junction Temperature (Note 1)
TJ
−65 to +175
°C
Voltage Rate of Change (Rated VR)
dv/dt
1000
V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS PER DIODE
Characteristic
Maximum Thermal Resistance, Junction−to−Case (Min. Pad)
Maximum Thermal Resistance, Junction−to−Ambient (Min. Pad)
Symcbol
RqJC
RqJA
Value
3.0
60
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS PER DIODE
Characteristic
Symbol
Min
Typ
Max Unit
Maximum Instantaneous Forward Voltage (Note 2)
(iF = 7.5 Amps, TJ = 125°C)
(iF = 15 Amps, TJ = 125°C)
(iF = 15 Amps, TJ = 25°C)
vF V
− 0.47 0.57
− 0.63 0.72
− 0.66 0.84
Maximum Instantaneous Reverse Current (Note 2)
(Rated DC Voltage, TJ = 125°C)
(Rated DC Voltage, TJ = 25°C)
iR mA
− 10 15
0.025
0.1
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%
ORDERING INFORMATION
Device
MBR1535CTG
MBR1545CTG
Package
TO−220
(Pb−Free)
TO−220
(Pb−Free)
Shipping
50 Units / Rail
50 Units / Rail
www.onsemi.com
2


Part Number MBR1535CTG
Description Switch-mode Power Rectifier
Maker ON Semiconductor
Total Page 5 Pages
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