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  ON Semiconductor Electronic Components Datasheet  

MBR3045WTG Datasheet

Switch Mode Power Rectifier

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MBR3045WTG
Switch Mode
Power Rectifier
These state−of−the−art devices use the Schottky Barrier principle
with a platinum barrier metal.
Features
Dual Diode Construction; Terminals 1 and 3 may be Connected for
Parallel Operation at Full Rating
Guardring for Stress Protection
Low Forward Voltage
175°C Operating Junction Temperature
Popular TO−247 Package
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
Mechanical Characteristics
Case: Epoxy, Molded
Weight: 4.3 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
MAXIMUM RATINGS
Rating
Symbol Max Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR, TC = 105°C)
Per Device
Per Diode
VRRM
VRWM
VR
IF(AV)
45
30
15
V
A
Peak Repetitive Forward Current,
IFRM 30 A
(Rated VR, Square Wave, 20 kHz)
Per Diode
Non−Repetitive Peak Surge Current
IFSM 200 A
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
Peak Repetitive Reverse Current (2.0 ms, IRRM 2.0 A
1.0 kHz) Per Diode (See Figure 6)
Storage Temperature Range
Operating Junction Temperature (Note 1)
Peak Surge Junction Temperature
(Forward Current Applied)
Tstg
TJ
TJ(pk)
−65 to +175
−65 to +175
175
°C
°C
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000 V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dPD/dTJ < 1/RqJA.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
30 AMPERES, 45 VOLTS
12
34
1
2
3
TO−247
CASE 340AL
MARKING DIAGRAM
MBR3045WT
AYWWG
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
MBR3045WTG
Package
TO−247
(Pb−Free)
Shipping
30 Units/Rail
© Semiconductor Components Industries, LLC, 2014
July, 2014 − Rev. 5
1
Publication Order Number:
MBR3045WT/D


  ON Semiconductor Electronic Components Datasheet  

MBR3045WTG Datasheet

Switch Mode Power Rectifier

No Preview Available !

MBR3045WTG
THERMAL CHARACTERISTICS (Per Diode)
Rating
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
Junction−to−Ambient
RqJC
RqJA
1.4 °C/W
40
ELECTRICAL CHARACTERISTICS (Per Diode)
Instantaneous Forward Voltage (Note 2)
(iF = 20 Amps, TC = 125°C)
(iF = 30 Amps, TC = 125°C)
(iF = 30 Amps, TC = 25°C)
vF V
0.6
0.72
0.76
Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TC = 125°C)
(Rated dc Voltage, TC = 25°C)
iR mA
100
1.0
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
TYPICAL CHARACTERISTICS
100
50
30
20
10
5.0
3.0
2.0
1.0
0.5
0.3
0.2
0.1
0
TJ = 150°C
25°C
0.2 0.4 0.6 0.8 1.0 1.2
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
1.4
100
TJ = 150°C
125°C
10
100°C
1.0 75°C
0.1
25°C
0.01
0 5.0 10 15 20 25 30 35 40 45 50
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Typical Reverse Current
http://onsemi.com
2


Part Number MBR3045WTG
Description Switch Mode Power Rectifier
Maker ON Semiconductor
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